NCKU CSAP

NCKU CSAP

發表及專利

發表論文
專利

許進恭博士團隊除了開發出具有商業價值之工業技術外，在學術研究上亦有不錯之表現，所發表之論文不只在量上有突出的表現，品質上亦有不錯的表現。截至目前為止(07.10. 2023)共發表300餘篇SCI期刊論文，根據Scopus 統計資料，許教授所發表之SCI論文的h-index為49 ，而根據在Google Scholar Citations之統計資料，h-index為57 。2021~2023連續三年被列入由史丹佛大學學者透過 Scopus 的論文影響力數據所發布的一份終身科學影響力排行榜「全球前 2% 頂尖科學家榜單（World’s Top 2% Scientists）」

出版品清單

發布年份

1998年

1. J. K. Sheu, Y. K. Su, S. J. Chang, G. C. Chi, K. B. Lin, C. C. Liu and C. C. Chiu, 1998,” Electrical Derivative Characteristics of Ion-implanted AlGaInP/GaInP Multi-quantum Well Lasers”, Vol.42, pp.2867-2869, Solid-State Electronics

2. J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou, C. C. Liu and G. C. Chi, 1998,” Investigations of Wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes”, Vol.145, pp.248-252, IEEE PROCEEDINGS-OPTOELECTRONICS

3. J. K. Sheu, Y. K. Su, G. C. Chi, C. Y. Chen, C. N. Huang, W. C. Chen, H. M. Hong, Y. C. Yu, C. W. Wang and E. K. Lin ,1998,” The Effects of Thermal Annealing on Ni/Au contacts of P-type GaN ”, Vol.83, pp.3172-3175, Journal of Applied Physics.

4. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou and C. M. Chang ,1998, “ Effects of Thermal Annealing on the indium tin oxide Schottky Contacts of n-GaN “ , Vol.72, pp.3317-3319, Applied Physics Letter

5. J. K. Sheu, Y. K. Su, G. C. Chi, B. J. Pong, C. Y. Chen, C. N. Huang, and W.C.Chen , 1998,” Photoluminescence spectroscopy of Mg-doped GaN ”, Vol.84, pp.4590-4594, Journal of Applied Physics

1999年

6. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu and W. C. Hung,1999,” Inductively Coupled Plasma Etching of GaN using Cl2/Ar and Cl2/N2 gases”, Vol. 85, pp.1970-1974, Journal of Applied Physics (IF: 2.072)(Rank:24/108 in Subject Categories of Physics, Applied).

7. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu and W. C. Hung, 1999,” High-transparency Ni / Au Ohmic Contact to P-Type GaN”, Vol.74, pp.2340-2342, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied).

8. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang and C. C. Liu, 1999, “ The indium tin oxide Ohmic contact to highly doped n-GaN”, Vol. 43, pp.2081-2084, Solid-State Electronics.

2. J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou, C. C. Liu and G. C. Chi, 1998,” Investigations of Wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes”, Vol.145, pp.248-252, IEEE PROCEEDINGS-OPTOELECTRONICS

2000年

9. J. K. Sheu*, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu, W. C. Hung, J. S. Bow and Y. C. Yu, 2000, “ The formation of Ti / Al Ohmic contact on etched n-GaN surfaces”, B.18 ,pp.729-732, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

10. J. K. Sheu*, G. C. Chi, Y. K. Su, C. C. Liu, C. M. Chang, W. C. Hung and M. J. Jou,2000,”Luminescence of an InGaN/GaN multiple quantum wells light-emitting diode”, V44, pp.1055-1058, Solid-State Electronics.

11. J. K. Sheu, Y. K. Su, G. C. Chi and M. J. Jou, 2000,” Growth and characterization of InGaN/GaN multi-quantum well light-emitting diodes”, Vol.7, pp.219-225 J. Chinese Institute of Electrical Engineering.(IF:0.190)(SCI)

12. G. C. Chi, C. H. Kou, J. K. Sheu and C. J. Pan, 2000,”The Doping Process of p-type GaN Films”, B75, pp.210-212, Materials Science and Engineering B-Solid State Materials for Advanced Technology (IF:1.756)(Rank:62/214 in Subject Categories of Materials Science, Multidisciplinary)

13. L. W. Chi, K. T. Lam, Y. K. Kao, F. S. Juang, Y. S. Tasi, Y. K. Su, S. J. Chang and J. K. Sheu, 2000,”Ohmic contacts to GaN with rapid thermal annealing”, 3938, 224, Proc. SPIE Int. Soc. Opt. Eng. (IF:0.877)

14. L. W. Tu, W. C. Kuo, K. H. Lee, P. H. Tsao, C. M. Lai, A. K. Chu, and J.K.Sheu, 2000,“High-dielectric-constantTa2O5/n-GaN metal-oxide-semiconductor structure” , Vol.77, pp.3788-3790, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied)

15. F. S. Chung, S. J. Chang, Y. K. Su, C. J. Chen and J. K. Sheu,2000,” Ohmic contacts and reactive ion beam etching for p-type GaN”, Vol.7, pp.203-210, J. Chinese Institute of Electrical Engineering (IF:0.190)(SCI)

16. Y. K. Su, G. C. Chi and J. K. Sheu, 2000,“ Optical properties in InGaN/GaN multiple quantum wells and blue LEDs”, Vol.14, pp.205-208, Optical materials, (IF:1.728) (Rank:67/214 in Subject Categories of Materials Science, Multidisciplinary)

2001年

17. J. K. Sheu*, C. H. Kuo, G. C. Chi, C. C. Chen and M. J. Jou,2001,” Characterization of the Properties of Mg-doped Al0.15Ga0.85N/GaN superlattices”,Vol.45, pp. 1665-1671, Solid-State Electronics, (IF:1.494)(Rank:73/246 in Subject Categories of Engineering, Electrical & Electronic)

18. J. K. Sheu*, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang and G. C. Chi,2001,” Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer”, Vol.22, pp. 460-462, IEEE Electron Device Letter (IF:2.605) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

19. T. C. Wen, W. I. Lee, J. K. Sheu and G. C. Chi,2001,“ Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition”, Vol.45, pp. 427-430, Solid-State Electronics (IF:1.494)(Rank:73/246 in Subject Categories of Engineering, Electrical & Electronic).

20. J. K. Sheu*, G. C. Chi, and M. J. Jou,2001, ” Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice “, Vol.22, pp.160-162, IEEE Electron Device Letter (IF:2.605) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

21. Chii-Chang Chen, Kun-Long Hsieh, J. K. Sheu, Gou-Chung Chi, Ming-Juinn Jou, Chih-Hao Lee, Ming-Zhe Lin, 2001, “Crystal orientation dependence of optical gain in InGaN/GaN multiple quantum well structure”, Vol.79, pp. 1477-1479, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied ).

22. C. H. Kuo, J. K. Sheu , G. C. Chi, Y. L. Huang , and T.W. Yeh, 2001,” Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices”, Vol.45, pp. 717-720, Solid-State Electronics (IF:1.494)(Rank:73/246 in Subject Categories of Engineering, Electrical & Electronic).

23. Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su, Gou Chung Chi, J. K. Sheu and I Chao Lin, 2001,”Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching”, Vol.40, pp. 2762-2764, Japanese Journal of Applied Physics (IF:1.138)(Rank:57/108 in Subject Categories of Physics, applied)

24. W.C. Lai, S. J. Chang, M. Yokoyama, J. K. Sheu and J. F. Chen, 2001,” InGaN-AlInGaN Multiquantum well LEDs”, Vol. 13, pp.559-561, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

25. Y. K. Su, Y. Z. Chiou, F. S. Juang, S. J. Chang and J. K. Sheu, 2001,”GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals”, Vol. 40, Issue 4B, pp. 2996-2999, Japanese Journal of Applied Physics (IF:1.138)(Rank:57/108 in Subject Categories of Physics, applied)

26. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu and J. F. Chen, 2001,” GaN metal-semiconductor-metal Ultraviolet photodetectors with transparent indium-tin -oxide Schottky contacts”, Vol. 13, pp.848-850, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

27. J. K. Sheu*, G. C. Chi, and M. J. Jou, 2001,” Enhanced output power in an InGaN/GaN multi-quantum well light-emitting diode an InGaN Current-Spreading Layer”, Vol. 13, pp.1164-1166, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

2002年

28. J. K. Sheu* and G. C. Chi, 2002,” Doping process and dopant characteristics of GaN”, Vol.14, No.22, pp.R657-R702, Journal of Physics (invited review paper)(IF:1.75)(SCI)

29. Gessmann T., Li Y. L., Waldron E. L., Graff J. W., Schubert E. F., and J. K. Sheu, 2002,“ Novel Type of Ohmic Contacts to P-Doped GaN Using Polarization Fields in Thin InxGa 1-xN Capping Layers”, Vol.31, pp.416-420, Journal of Electronic Materials(IF:1.428) (Rank:79/246 in Subject Categories of Engineering, Electrical & Electronic)

30. T. Gessmann, Y.-L. Li, E. L. Waldron, J. W. Graff, E. F. Schubert, and J. K. Sheu, 2002, ”Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN cap-layers” , Vol.80, pp.986-988, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied ).

31. L. W. Tu, P. H. Tsao, K. H. Lee, Ikai Lo, S. J. Bai, C. C. Wu, K. Y. Hsieh, and J. K. Sheu, 2002,“ Polymer PBT/n-GaN metal-insulator-semiconductor structure”, Vol.79, pp.4589-4591, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied ).

32. J. K. Sheu*, M. S. Tsai, C. J. Tun, and G. C. Chi , 2002,” n+-GaN formed by Si implantation into p-GaN “, Vol.91, pp.1845-1848, Journal of Applied Physics (IF: 2.072)(Rank:24/108 in Subject Categories of Physics, Applied )

33. T. C. Wen, W. I. Lee, J. K. Sheu and G. C. Chi , 2002, “ Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching”, Vol.46, pp.555-558, Solid-State Electronics (IF:1.494)(Rank:73/246 in Subject Categories of Engineering, Electrical & Electronic).

34. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen and G. C. Chi, 2002,“ Low temperature activation of Mg-doped GaN in O2 ambient”, Vol.41, L112, Japanese Journal of Applied Physics (IF:1.138)(Rank:57/108 in Subject Categories of Physics, applied)

35. C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu and Y. H. Laiw, 2002 , “High-brightness green light emitting diodes with charge asymmetric resonance tunneling structure”, Vol.23, pp.130-132, IEEE Electron Device Letter (IF:2.605) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

36. I-kai Lo, J. K. Tsai, Li-Wei Tu, K. Y. Hsieh, M. H. Tsai, C. S. Liu, J. H. Huang, S. Elhamri, W. C. Mitchel, and J. K. Sheu , 2002, “ Piezoelectric effect on Al0.35-xInxGa0.65N/GaN heterostructures”, Vol.80, pp.2684-2686, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied )

37. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen and G. C. Chi , 2002,” InGaN/GaN light emitting diodes activated in O2 ambient”, Vol.23, pp.240-242, IEEE Electron Device Letter (IF:2.605) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

38. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, W. C. Lai , C. H. Kou, C. H. Chen and J. K. Sheu , 2002, ”Influence of Si-doping on the characteristics of InGaN/GaN Multiple Quantum Well Blue Light Emitting Diodes”, Vol. 38, pp.446-450, IEEE Journal of Quantum Electronics (IF:1.968) (Rank:44/246 in Subject Categories of Engineering, Electrical & Electronic)

39. T. C. Wen, S. J. Chang, L. W. Wu , Y. K. Su,W. C. Lai, C. H. Kou, C. H. Chen and J. K. Sheu, 2002,” InGaN/GaN tunnel-injection blue light-emitting diodes”, Vol.49, No.6, pp.1093-1095, IEEE Transactions on Electron Devices (IF:2.445) (Rank:26/246 in Subject Categories of Engineering, Electrical & Electronic)

40. C. H. Chen, S. J. Chang,Y. K. Su, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai and J. M. Tsai , 2002, “ GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes” ,Vol.2,No.4, pp.366-371, IEEE Sensors Journal (IF:1.581) (Rank:69/246 in Subject Categories of Engineering, Electrical & Electronic)

41. J. K. Sheu*, C. J. Pan, G. C. Chi, C. H. Kou, L. W. Wu, C. H. Chen, S. J. Chang and Y. K. Su , 2002, ” White-light emission from InGaN/GaN multi-quantum well light-emitting diodes with Si and Zn co-doped active well layer” , Vol.14, pp.450-452, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

42. C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen and Y. C. Lin , 2002, ” Nitride-based cascade near white light emitting diodes”, Vol.14, pp.908-910, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

43. Chii-Chang Chen, Kun-Long Hsieh, J. K. Sheu, Gou-Chung Chi, Ming-Juinn Jou, Chih-Hao Lee, Ming-Zhe Lin, 2002, “Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure”, 93, pp. 28-30, Materials Science and Engineering B-Solid State Materials for Advanced Technology (IF:1.756)(Rank:62/214 in Subject Categories of Materials Science, Multidisciplinary)

43. Chii-Chang Chen, Kun-Long Hsieh, J. K. Sheu, Gou-Chung Chi, Ming-Juinn Jou, Chih-Hao Lee, Ming-Zhe Lin, 2002, “Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure”, 93, pp. 28-30, Materials Science and Engineering B-Solid State Materials for Advanced Technology (IF:1.756)(Rank:62/214 in Subject Categories of Materials Science, Multidisciplinary)

44. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and J. F. Chen , 2002, ” High efficient InGaN/GaN MQW green light emitting diodes with CART and DBR structures”, Vol.8, No.2, pp. 284-288, IEEE Journal of Selected topics in Quantum Electronics (IF:3.064) (Rank:14/246 in Subject Categories of Engineering, Electrical & Electronic)

45. M. L. Lee, J. K. Sheu*, L. S. Yeh, M. S. Tsai, C. J. Kao, C. J. Tun, S. J. Chang and G. C. Chi , 2002,” GaN p-n junction diode formed by Si ion implantation into p-GaN”, Vol.46, No.12, pp.2179-2183, Solid-State Electronics(IF:1.494)(Rank:73/246 in Subject Categories of Engineering, Electrical & Electronic)

46. J. K. Sheu, M. L. Lee , C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang and G. C. Chi , 2002,” Characterization of Si implants in p-type GaN”, Vol.8, No.4, pp. 767-772, IEEE Journal of Selected topics in Quantum Electronics (IF:3.064) (Rank:14/246 in Subject Categories of Engineering, Electrical & Electronic)

47. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai , 2002, ” 400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes”, Vol.8, No.4, pp. 744-748, IEEE Journal of Selected topics in Quantum Electronics (IF:3.064) (Rank:14/246 in Subject Categories of Engineering, Electrical & Electronic)

48. J. K. Sheu*, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, M. J. Chen and G. C. Chi , 2002, ” Planar GaN ultraviolet photodetectors formed by Si implants into p-GaN” , Vol. 81, No.22, pp.4263-4265, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied ).

49. L. S. Yeh, M. L. Lee, J. K. Sheu*, M. G. Chen , C. J. Kao, G. C. Chi, S. J. Chang and Y. K. Su, 2002, ”Low dark current GaN-based PIN ultraviolet photodetector with AlGaN/GaN superlattice p-layer structure” , Vol.47, pp.873-878, Solid-State Electronics(IF:1.494)(Rank:73/246 in Subject Categories of Engineering, Electrical & Electronic).

2003年

50. J. K. Sheu, C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, Y. C. Lin, J. M. Tsai, R. K. Wu and G. C. Chi, 2003, “White-Light Emission From Near UV InGaN-GaN LED Chip Precoated With Blue/Green/Red Phosphors”, Vol. 15,No.1, pp.18-20, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

51. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, and J. M. Tsai , 2003, ” Nitride-based near UV MQW LEDs with AlGaN barrier layers”, 32 (5): 415-418, Journal of Electronic Materials (IF:1.428) (Rank:79/246 in Subject Categories of Engineering, Electrical & Electronic)

52. X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, S. J. Chang and G. C. Chi, 2003, ” Deep level defect in Si-implanted GaN n+-p junction” , vol.82, pp.3671-3673, Applied Physics Letter (IF:3.596)(Rank:8/94 in Subject Categories of Physics, Applied ).

53. J. K. Sheu, C. J. Kao, M. L. Lee,W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K.Su and J.M.Tsai, 2003, ”Low-dark current, high-sensitivity metal-semiconductor-metal ultraviolet photodetectors based on GaN with low-temperature GaN intermediate layer”, vol.32, pp.400-402, Journal of Electronic Materials(IF:1.428) (Rank:79/246 in Subject Categories of Engineering, Electrical & Electronic)

54. L. W. Wu, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, J. K. Sheu, J. M. Tsai, S. C. Chen and B. R. Huang, 2003, ” InGaN/GaN LEDs with a Si-Doped InGaN/GaN Short-Period Superlattice Tunneling Contact Layer”, vol.32, pp.411-413,Journal of Electronic Materials (IF:1.428) (Rank:79/246 in Subject Categories of Engineering, Electrical & Electronic)

55. C. H. Kuo, S. J. Chang, Y. K. Su, J.F. Chen, J. K. Sheu, and J. M. Tsai, 2003,” Nitride-based LEDs with Si-Doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer”, vol.50, pp.535-537, IEEE Transactions on Electron Devices (IF:2.445) (Rank:26/246 in Subject Categories of Engineering, Electrical & Electronic)

56. Chii-Chang Chen, Ming-Hung Li, J. K. Sheu, Gou-Chung Chi, Wei-Tai Cheng, Jui-Hung Yeh, Jenq-Yang Chang, Toshiaki Ito, 2003, “ GaN diffractive microlenses fabricated with gray-level mask” ,Vol.215, pp.75-78, Optics Communications (IF:1.316)(Rank:26/71 in Subject Categories of Optics )

57. Cheng-Huang Kuo, J. K. Sheu, Shoou-Jinn Chang, Yan-Kuin Su, Liang-Wen Wu, Ji-Ming Tsai, C. H. Liu and R. K. Wu , 2003, “n-UV plus Blue/Green/Red White Light Emitting Diode Lamps”,Vol.42, pp.2284-2287, Japanese Journal of Applied Physics (IF:1.138)(Rank:57/108 in Subject Categories of Physics, applied)

58. L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C. Lai, C. S. Chang,, J. M. Tsai, and J. K. Sheu, 2003, ” Nitride-Based Green Light-Emitting Diodes With High Temperature GaN Barrier Layers” Vol.50, pp.1766-1770, IEEE Transactions on Electron Devices (IF:2.445) (Rank:26/246 in Subject Categories of Engineering, Electrical & Electronic)

59. Cheng-Huang Kuo, Shoou-Jinn Chang, Yan-Kuin Su, Liang-Wen Wu, Jone F. Chen, J. K. Sheu and Ji-Ming Tsai, 2003, ” GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer” ,Vol.42, pp.2270-2272, Japanese Journal of Applied Physics (IF:1.138)(Rank:57/108 in Subject Categories of Physics, applied)

60. Yi-Sheng Ting, Chii-Chang Chen, J. K. Sheu, Gou-Chung Chi, Jung-Tsung Hsu, 2003, “Electrical efficiency analysis of GaN-based LEDs with interdigitated mesa geometry “ , vol.32,pp.312-315, Journal of Electronic Materials (IF:1.428) (Rank:79/246 in Subject Categories of Engineering, Electrical & Electronic)

61. Ru-Chin Tu, Chun-Ju Tun, J. K. Sheu, Wei-Hong Kuo, Te-Chung Wang, Ching-En Tsai, Jung-Tsung Hsu, Jim Chi, and Gou-Chung Chi, 2003, “ Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer”, Vol.24, pp.206-208, IEEE Electron Device Letter (IF:2.605) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

62. S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M.Tsai, 2003,” Low-dark-current GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layer” Vol.24, pp.212-214, IEEE Electron Device Letter (IF:2.605) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

63. T.C. Wen, S.J. Chang, Y.K. Su, L.W. Wu, C.H. Kuo, W.C. Lai, J.K. Sheu, and T.Y. Tsai , 2003, “InGaN/GaN Multiple Quantum Well Green Light-Emitting Diodes Prepared by Temperature Ramping”, vol.32, pp.419-421, Journal of Electronic Materials (IF:1.428) (Rank:79/246 in Subject Categories of Engineering, Electrical & Electronic)

64. M. L. Lee, J. K. Sheu*, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen,C. J. Kao, J. M. Tsai and G. C. Chi , 2003, ” GaN

Schottky barrier photodetectors with a low-temperature GaN cap layer” ,Vol.82, n17, pp.2913-2915, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied )

65. Chang, S.J.; Chen, C.H.; Su, Y.K.; J. K. Sheu.; Lai, W.C.; Tsai, J.M.; Liu, C.H.; Chen, S.C. , 2003, ” Improved ESD

protection by combining InGaN-GaN MQW LEDs with GaN schottky diodes” vol.24,pp.129-131, IEEE Electron Device Letter (IF:2.605) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

66. S. J. Chang, Y. K. Su, Y. C. Lin, R. W. Chuang , C. S. Chang, J. K. Sheu , T. C. Wen, S. C. Shei, C. W. Kuo, D. H. Fang , 2003, ” MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates” phys. stat. sol. (c) 30, No. 7, 2253–2256 (IF:0.948)(SCI)

67. C.H. Kuo, S.J. Chang, Y.K. Su, L.W. Wu, J.K. Sheu, T.C. Wen,W.C. Lai, J.M. Tsai, and S.C. Chen , 2003, ” Nitride-Based Near-Ultraviolet Multiple-Quantum Well Light-Emitting Diodes with AlGaN Barrier Layers” , vol.32, pp.415-417, Journal of Electronic Materials (IF:1.428) (Rank:79/246 in Subject Categories of Engineering, Electrical & Electronic)

68. Ru-Chin Tu, Chun-Ju Tun, Shyi-Ming Pan, Hai-Ping Liu, Ching-En Tsai, J. K. Sheu, Chang-Cheng Chuo, Te-Chung Wang, Gou-Chung Chi, and In-Gann Chen , 2003, ” Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes through Higher Pressure Grown Underlying GaN Layers” vol.15,pp.1050-1052, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

69. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen,C. J. Kao, J. M.Tsai and G.C.Chi , 2003,” Characterizations of GaN Schottky barrier photodetectors with a highly-resistivity low-temperature GaN cap layer” ,Vol.94, pp.1753-1757, Journal of Applied Physics (IF: 2.072)(Rank:24/108 in Subject Categories of Physics, Applied )

70. Y.-L. Li, Th. Gessmann, E. F. Schubert, and J. K. Sheu, 2003, ”Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths” ,Vol.94, pp.2167-2172, Journal of Applied Physics (IF: 2.072)(Rank:24/108 in Subject Categories of Physics, Applied )

71. Chia-Hung Hou, Ming-Hung Li, Chii-Chang Chen, Jenq-Yang Chang, Jinn-Kong Sheu,Gou-Chung Chi, Chuck Wu, Wei-Tai Cheng and Jui-Hung Yeh,” Gallium Nitride Diffractive Microlenses Using in Ultraviolet Micro-Optics System”, vol. 10, p. 287, 2003, Optical Review (IF:0.529)(Rank:54/71 in Subject Categories of Optics)

72. T. Gessmann, Y.-L. Li, E. F. Schubert, J. W. Graff and J. K. Sheu , 2003, “GaInN light-emitting diodes with omni-directional reflectors”, Proc. SPIE Int. Soc. Opt. Eng. 4996, 139 (IF:0.877)

73. C. S. Chang, S. J. Chang, Y. K. Su , W. C. Lai , C. H. Kuo, C. K. Wang, Y. C. Lin , Y. P. Hsu, S. C. Shei, H. M. Lo , J. C. Ke , J. K. Sheu, 2003,“High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode”, Physica Status Solidi (c), Vol.10, issue 7, pp.2227-2231 (IF:0.948)(SCI)

74. Ru-Chin Tu, Shyi-Ming Pan, Chang-Cheng Chuo, Chun-Ju Tun, J. K. Sheu, Ching-En Tsai, Te-Chung Wang, and Gou-Chung Chi, 2003” Improvement of Near-Ultraviolet InGaN/GaN Light Emitting Diodes with an AlGaN Current-blocking Layer Grown at Low Temperature, ” IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

75. S. J. Chang , L. W. Wu, Y. K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, S. F. Chen, J. M. Tsai , 2003, ” Si and Zn co-doped InGaN-GaN white light-emitting diodes”, 50 (2): 519-521, IEEE Transactions on Electron Devices (IF:2.445) (Rank:26/246 in Subject Categories of Engineering, Electrical & Electronic)

76. E. L. Waldron, Y.-L. Li, E. F. Schubert, J. W. Graff and J. K. Sheu , 2003, ”Experimental study of perpendicular transport in weakly coupled AlxGa1–xN/GaN superlattices” ,Vol.83, pp.4975-4977, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied ).

77. L.W.Wu,S.J.Chang,Y.K.Su,R.W.Chuang,Y.P.Hsu,C.H.Kuo,W.C.Lai,T.C.Wen,J.M.Tsai,J.K.Sheu , 2003, ”In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer”, Vol.47,(2003)pp.2027-2030, Solid-State Electronics (IF:1.494)(Rank:73/246 in Subject Categories of Engineering, Electrical & Electronic).

78. C.S.Chang, S.J.Chang, Y.K.Su, C.H.Kuo, W.C.Lai, Y.C.Lin, Y.P.Hsu, S.C.Shei, J.M.Tsai, H.M.Lo, J.C.Ke,and J.K. Sheu , 2003, “High brightness InGaN green LEDs with an ITO on n++-SPS upper contact”, Vol.50,No.11,pp.2208-2212, IEEE Transactions on Electron Devices (IF:2.445) (Rank:26/246 in Subject Categories of Engineering, Electrical & Electronic)

79. C. H. Kuo, S.J. Chang, Y.K. Su, C.K.Wang, L.W. Wu, J.K. Sheu, T.C. Wen,W.C. Lai, and J.M. Tsai , 2003,” Nitride-based blue LEDs with GaN/SiN double buffer layers”, Vol.47,pp.2019-2022, Solid-State Electronics (IF:1.494)(Rank:73/246 in Subject Categories of Engineering, Electrical & Electronic)

2004年

80. Hsu, Y.P.; Chang, S.J.; Su, Y.K.; Sheu, J.K.; Lee, C.T.; Wen, T.C.; Wu, L.W.; Kuo, C.H.; Chang, C.S. , 2004, ” Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs”, V261, pp. 466-470 Journal of Crystal growth (IF:1.534)(Rank:12 /25 in Subject Categories of crystallography)

81. S.J.Chang,C.S.Chang,Y.K.Su,R.W.Chung,W.C.Lai,C.H.Kuo,Y.P.Hsu, Y.C.Lin,S.C.Shei, H.M.Lo,J.C.Ke,and J.K.Sheu , 2004, ” Nitride-based LEDs with an SPS tunneling contact and an ITO transparent contact”, Vol.16,No.4,pp.1002-1004,

IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

82. Y. Takahashi, A. Satake, K. Fujiwara, J. K. Sheu, U. Jahn, H. Kostial and H.T.Grahn , 2004, ” Enhanced radiative efficiency in blue InGaN MQW LEDs with an electron reservoir layer”, Vol.21,pp876-880, Physica E-Low-Dimensional Systems & Nanostructures (IF:1.177)(Rank:41/59 in Subject Categories of Nanoscience & Nanotechnology)

83. Chii-Chang CHEN_, Chia-Hung HOU, J. K. Sheu, Jenq-Yang CHANG, Ming-Hung LI1,Gou-Chung CHI and Chuck WU , 2004, ” Gratings in GaN Membranes”, Vol. 43, No. 8B, 2004, pp. 5854-5856, Japanese Journal of Applied Physics (IF:1.138)(Rank:57/108 in Subject Categories of Physics, applied)

84. M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang,W. C. Lai, and G. C. Chi , 2004, ” Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer”, Vol.25, pp.593-595, IEEE Electron Device Letter (IF:2.605) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

85. T. C. Wen, S. J. Chang, C. T. Lee, W. C. Lai, J. K. Sheu , 2004, “Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures”, 51 (10): 1743-1746 IEEE Transactions on Electron Devices (IF:2.445) (Rank:26/246 in Subject Categories of Engineering, Electrical & Electronic)

86. Kuo, C H; Chang, S J; Su, Y K; Chuang, R W; Chang, C S; Wu, L W; Lai, W C; Chen, J F; J. K. Sheu; Lo, H M, 2004, “Nitride-based near-ultraviolet LEDs with an ITO transparent contact”, Vol. B106, no. 1, pp. 69-72, Materials Science and Engineering B-Solid State Materials for Advanced Technology (IF:1.756)(Rank:62/214 in Subject Categories of Materials Science, Multidisciplinary)

87. C. J. Kao, J. K. Sheu*, W. C. Lai , M. C. Chen, M. L. Lee and G. C. Chi , 2004, ” Effect of low-temperature-grown GaN cap layer on electrical properties of Al0.25Ga0.75N/GaN heterojunction field-effect transistors” Vol.85, pp.1430-1432, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied ).

88. Chang SJ, Wu LW, Su YK, Hsu YP, Lai WC, Tsai JA, J. K. Sheu, Lee C.T , 2004, ” Nitride-based LEDs with 800 degrees C grown p-AllnGaN-GaN double-cap layers”, Vol. 16,No.6, pp.1447-1449, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

89. C. J. Pan, G. C. Chi, B. J. Pong, J. K. Sheu, and J. Y. Chen , 2004, ”Si diffusion in p GaN”, Vol.22, pp.1727-1730, Journal of Vacuum Science & Technology B: Microelectronics (IF:1.460)(Rank:77/246 in Subject Categories of Engineering, Electrical & Electronic)

2005年

90. J. K. Sheu*, M. L. Lee, and W. C. Lai , 2005, ” Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes” Vol. 86, 052103, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied ).

91.T. H. Hsueh, H. W. Huang, F. I. Lai, J. K. Sheu, Y. H. Chang, H. C. Kuo, and S. C. Wang, 2005,” Photoluminescence from1. In0.3Ga0.7N/GaN Multiple Quantum Wells Nanorods” Nanotechnology, Vol.16, No.4, pp.448-450, Nanotechnology (IF:3.137) (Rank:31/214 in Subject Categories of Materials Science, Multidisciplinary)

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