2006

1.      Shi, J.-W.; Huang, H.-Y.; Sheu, J.-K.; Hsieh, S.-H.; Wu, Y.-S.; Lu, J.-Y.; Huang, F.-H.; Lai, W.-C., 2006,” Nitride-Based Photodiode at 510-nm Wavelength for Plastic Optical Fiber Communication”, Vol. 18  No.1 , pp.283-285, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

2.      Chun-Ju Tun , Jinn-Kong Sheu*, Bao-Jen Pong, Ming-Lun Lee, Ming-Yu Lee, Cheng-Kang Hsieh, Ching-Chung Hu, and Gou-Chung Chi, 2006 “Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer”, Vol. 18  No.1 , pp.274-276, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

3.      Kuang-Po Hsueh, Yue-Ming Hsina_ and Jinn-Kong Sheu, 2006, “Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer ”, Vol. 99 , 026106-026108, Journal of Applied Physics (IF: 2.072)(Rank:24/108 in Subject Categories of Physics, Applied )

4.      Jinn-Kong Sheu*, Ming-Lun Lee, Chun-Ju Tun, S.W.Lin, 2006,”Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN” , Vol. 88, 043506, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied )

5.      J. K. Sheu*, C.M.Tsai, M. L. Lee, S.C.Shei and W.C.Lai, 2006, ”InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface”, Vol. 88, 113505, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied )

6.      Ming-Lun Lee, Jinn-Kong Sheu*, and S.W.Lin, 2006,“ Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer” , Vol. 88, 032103, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied )

7.      Shih-Chang Shei , Jinn-Kong Sheu*, Chi-Ming Tsai, ,Wei-Chi Lai , Min-Lum Lee, and Cheng-Huang Kuo, 2006,” Emission Mechanism of Mixed-color  InGaN/GaNMulti-quantum Well Light-emitting Diodes”, Vol.45, No.4A, pp.2463-2466, Japanese Journal of Applied Physics (IF:1.138)(Rank:57/108 in Subject Categories of Physics, applied)

8.      C. J. Tun, J. K. Sheu*, M. L. Lee, C. C. Hu, C. K. Hsieh and G. C. Chi, 2006,”Effects of thermal annealing on transparent Al-doped ZnO films deposited on p-GaN”, Vol.153, No.4, pp.G296-G298, Journal of the Electrochemical Society (IF:2.241) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

9.       Chang SJ, Ko TK, Su YK, Chiou YZ, Chang CS, Shei SC, Sheu JK, Lai WC, Lin YC, Chen WS, Shen CF, 2006,” GaN-based p-i-n sensors with ITO contacts”, 6 (2): 406-411, IEEE Sensors Journal (IF: 1.581) (Rank:69/246 in Subject Categories of Engineering, Electrical & Electronic)

10. M. C. Chen, J. K. Sheu*, M. L. Lee, C. J. Kao, C. J. Tun, and G. C. Chi, 2006, ”Planar ultra-violet photodetectors formed by Si implantation into p-GaN”, Vol.153 No.9, pp.G799-G801, Journal of the Electrochemical Society (IF:2.241) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

11. M. C. Chen, J. K. Sheu*, M. L. Lee, C. J. Kao, and G. C. Chi, 2006, ”Planar GaN p-i-n photodiodes with n⁺-conductive channel formed by Si implantation” Vol.88, pp.203508-203510, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied )

12. C. M. Tsai, J. K. Sheu*, P. T. Wang, W. C. Lai, S. C. Shei, S. J. Chang, C.H.Kuo, C.W.Kuo and Y. K. Su, 2006, ” High Efficiency and Improved ESD Characteristics of GaN-based LEDs with Naturally Textured Surface Grown by MOCVD”, Vol.18, No.11, pp.1213-1215, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

13. Ko TK, Shei SC, Chang SJ, Su YK, Chiou YZ, Lin YC, Chang CS, Chen WS, Wang CK, J. K. Sheu, Lai WC, 2006, “Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors “, 6 (4): 964-969, IEEE Sensors Journal (IF: 1.581) (Rank:69/246 in Subject Categories of Engineering, Electrical & Electronic)

14. Ko, T.K.; Chang, S.J.; Su, Y.K.; Chiou, Y.Z.; Chang, C.S.; Shei, S.C.; Sheu, J.K.; Lai, W.C.; Lin, Y.C.; Chen, W.S.; Shen, C.F., Aug. 2006” Nitride-based flip-chip p-i-n photodiodes”, Volume 29,  Issue 3,  Page(s):483 – 487, IEEE Transactions on Advanced Packaging (IF:1.122)(Rank:13/37 in Subject Categories of Engineering, Manufacturing )

15. Shi JW, Huang HY, Sheu JK*, Chen CH, Wu YS, Lai WC, 2006,” The improvement in modulation speed of GaN-based green light-emitting diode, (LED) by use of n-type barrier, doping for plastic optical fiber (POF) communication”, Vol.18 (No.13-16): pp.1636-1638, IEEE Photonics Technology Letters (IF:1.815)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

16. Ko TK, Chang SJ, Sheu JK, Shei SC, Chiou YZ, Lee ML, Shen CF, Chang SP, Lin KW, 2006, ” AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO contacts and LT-GaN cap layers “, Vol.21 (No.8): 1064-1068, Semiconductor Science and Technology (IF 1.253)(Rank:93/246 in Subject Categories of Engineering, Electrical & Electronic)

17. M. C. Chen, J. K. Sheu*, M. L. Lee, C. J. Tun, and G. C. Chi, 2006,” Improved Performance of Planar GaN-based p-i-n Photodetectors with Mg-implanted Isolation Ring” , Vol.89, pp.183509, Applied Physics Letter (IF:3.554)(Rank:14/108 in Subject Categories of Physics, Applied ).

18. Chang, S. J., Shen, C. F., Shei, S. C., Chuang, R. W., Chang, C. S., Chen, W. S., Ko, T. K., Sheu, J. K. 2006,” Highly reliable nitride-based LEDs with internal ESD protection diodes”, Vol. 6 (3), pp. 442-447, IEEE Transactions on Device and Materials Reliability (IF: 1.947) (Rank:45/246 in Subject Categories of Engineering, Electrical & Electronic)

19. C. J. Tun, J. K. Sheu, B. J. Pong, M. L. Lee, M. Y. Lee, C. K. Hsieh, C. C. Hu, and G. C. Chi, 2006 ”Applications of transparent Al-doped ZnO contact on GaN-based power LED”, Proc. SPIE, Vol. 6121, 61210X (EI)

20. N. Otsuji and K. Fujiwara and J. K. Sheu, 2006, ” Electroluminescence efficiency of blue InGaN/GaN quantum-well diodes with and without an n-InGaN electron reservoir layer”, Vol.100,113105, Journal of Applied Physics (IF: 2.072)(Rank:24/118 in Subject Categories of Physics, Applied )

2007

1.      M. L. Lee and J. K. Sheu*, 2007,” GaN-based Ultraviolet p-i-n Photodiodes with Buried p-layer Structure Grown by MOVPE”, Vol.154, H182-H184, Journal of the Electrochemical Society (IF:2.427) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

2.      Y. P. Hsu, S. J. Chang, W. S. Chen,a J. K. Sheu, J. Y. Chu, and C. T. Kuo, 2007 ,”Crack-Free High-Brightness InGaN/GaN LEDs on Si(111) with Initial AlGaN Buffer and Two LT-Al Interlayers”, Vol. 154  No. 3, pp. H191-H193, Journal of the Electrochemical Society (IF:2.427) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

3.      S.J. Chang, T.K. Ko, J.K. Sheu, S.C. Shei, W.C. Lai, Y.Z. Chiou,Y.C. Lin, C.S. Chang, W.S. Chen, C.F. Shen, 2007 ” AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates”, 135, 502–506, Sensors and Actuators A-Physical (IF:1.941)(Rank:65/246 in Subject Categories of Engineering, Electrical & Electronic)

4.      J. K. Sheu*, K. W. Shu, M. L. Lee, C. J. Tun and G. C. Chi, 2007,” Effect of Thermal Annealing on Ga-doped ZnO Films Prepared by Magnetron Cosputtering”, Volume  154, Number 6, H521-524, Journal of the Electrochemical Society (IF:2.427) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

5.      S. C. Shei, Jinn-Kong Sheu*, and Chien-Fu Shen, 2007, “ Improved Reliability and ESD characteristics of Flip-Chip GaN-based LEDs with Internal Inverse-parallel Protection Diodes”, Vol. 28, NO. 5, pp.346-349, IEEE Electron Device Letter (IF:2.719) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

6.      Kuang-Po Hsueh, Shou-Chian Huang, Ching-Tai Li and Yue-Ming Hsin, Jinn-Kong Sheu, Wei-Chih Lai and Chun-Ju Tun, 2007,” Temperature-dependent study of n-ZnO/p-GaN diodes “, Vol.90, 132111, Applied Physics Letter (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied ).

7.      T. Inoue, K. Fujiwara, and J. K. Sheu, 2007, ” Hole escape processes detrimental to photoluminescence efficiency in a blue InGaN multiple-quantum-well diode under reverse bias conditions”, Vol.90, 161108, Applied Physics Letter (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied )

8.      Kuang-Po Hsueh, Yue-Ming Hsin, Jinn-Kong Sheu, Wei-Chih Lai, Chun-Ju Tun, Chia-Hung Hsu and Bi-Hsuan Lin, 2007,” Effects of leakage current and Schottky-like ohmic contact on the characterization of Al_0.17Ga_0.83N/GaN HBTs, Vol.51, pp.1073-1078, Solid-State Electronics (IF:1.44)(Rank:73/246 in Subject Categories of Engineering, Electrical & Electronic)

9.      Chang, Yun-Chorng, Li, Yun-Li, Lin, Tzung-Han, and Sheu, Jinn-Kong, Jun. 2007. ” Variations of channel conductance in AlGaN/GaN structure with sub-bandgap laser light and above-bandgap illuminations”, Vol.46 (6a)pp.3382-3384, Japanese Journal of Applied Physics part 1-regular papers brief communications & review papers (IF:1.024)(Rank:57/118 in Subject Categories of Physics, applied)

10. Shi, J.-W.; Sheu, J.-K.*; Wang, C.-K.; Chen, C.-C.; Hsieh, C.-H.; Chyi, J.-I.; and Lai, W.-C., 2007, ”Linear Cascade Arrays of GaN-Based Green Light-Emitting Diodes for High-Speed and High-Power Performance”, Volume  19  Issue: 18  pp. 1368-1370, IEEE Photonics Technology Letters (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

11. S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S.C. Shei and J. K. Sheu, 2007, ” Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography”, 91, 013504, Applied Physics Letter (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied ).

12. Jinn-Kong Sheu*^, Y.S.Lu,  Min-Lum Lee, W.C.Lai, C.H.Kuo and Chun-Ju Tun, 2007” Enhanced Efficiency of GaN-based Light-Emitting Diodes With Periodic Textured Ga-doped ZnO Transparent Contact Layer”, Vol. 90, 263511 Applied Physics Letter (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied ).

13. Y Yamane, K Fujiwara, J.K.Sheu, 2007,” Largely variable electroluminescence efficiency with current and temperature in a blue InGaN multiple-quantum-well diode “, Vol.91, 073501, Applied Physics Letter (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied ).

14. M. L. Lee, J. K. Sheu* and C. C. Hu, 2007,” Non-alloyed Cr/Au Ohmic contacts to n-GaN ”, Vol.91, 182106, Applied Physics Letter (IF:3.841)(Rank:14/108 in Subject Categories of Physics, Applied ).

2008

15. M. L. Lee, J. K. Sheu* and Yung-Ru Shu, ,” Ultraviolet bandpass Al0.17Ga0.83N/GaN heterojunction phototransitors with high optical gain and high rejection ratio ”, Vol.92, 053506(2008), Applied Physics Letter (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied ).

16. J.-W. Shi, J.-K. Sheu*, C.-H. Chen, G.-R. Lin, W.-C. Lai, ,2008,” High-Speed GaN-based Green Light Emitting Diodes with Partially n-doped Active Layers and Current-Confined Apertures”, Vol.29, No.2, pp. 158-160, IEEE Electron Device Letters (IF:2.719) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic) 

17. J. K. Sheu* , K. H. Chang and M. L. Lee, 2008, ” Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to n-GaN” 92, 113512, Applied Physics Letter (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied ).

18. J.-W. Shi, C.-C. Chen, C.-K. Wang, C.-S. Lin, J.-K. Sheu, W.-C. Lai, C.-H. Kuo, C.-J. Tun, T.-H. Yang, F.-C. Tsao, and J.-I. Chyi, 2008, ” Phosphor-Free GaN-Based Transverse Junction White-Light Light-Emitting Diodes With Regrown n-Type Regions”, Vol. 20, No. 6, pp.449-451, IEEE Photonics Technology Letters (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

19. Wei-Chih Lai, Jinn-Kong Sheu, Yi-Keng Fu, Cheng-Huang Kuo, Chi-Wen Kuo, Ching-Ju Tun, Ching-Jen Pan, and Gou-Chung Chi, 2008, ” Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors”, Vol.47, pp. 6317-6319, Japanese Journal of Applied Physics (IF:1.024)(Rank:57/118 in Subject Categories of Physics, applied)  

20. Chung-Hsun Jang, J. K. Sheu*, C. M. Tsai, S. C. Shei W.C. Lai and S. J. Chang, 2008 ,”Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-based LEDs”, Vol. 20, No. 13, pp.1142-1144, IEEE Photonics Technology Letters  (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

21. Kuo, C. H., Yeh, C. L., Chen, P. H., Tun, C. J., Sheu, J. K., Chi, G. C.,2008, “ Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer”, Vol. 11 ,pp. H269-H271, Electrochemical and Solid State Letters (IF:1.981)(Rank:58/214 in Subject Categories of Materials Science, Multidisciplinary)

22. Wu, Shang-En, Hsueh, Tao-Hung, Liu, Chuan-Pu, Sheu, Jinn-Kong, Lai, Wei-Chih, Chang, Shoou-Jinn,” Focused Ion Beam Milled InGaN/GaN Multiple Quantum Well Nanopillars”, Vol.47,  Part 2, pp. 3130-3133,2008, Japanese Journal of Applied Physics (IF:1.024)(Rank:57/118 in Subject Categories of Physics, applied)

23. J. K. Sheu*, I-Hsiu Hung, W. C. Lai, S. C. Shei, and M. L. Lee, 2008, ”Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads”, Vol.93, 103507, Applied Physics Letter (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied ).

24. W. C. Lai, Y. S. Huang, Y. W. Yen, J. K. Sheu, T. H Hsueh, C. H. Kuo, S. J. Chang, 2008, ”The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers”, phys. stat. sol. (c) 5 (6): 1639

25. Liang-Jyi Yan, J.K.Sheu^*, Wei-Chih Wen, Tien-Fu Liao, Ming-Jong Tsai and Chih-Sung Chang, 2008, ”Improved light extraction efficiency in AlGaInP light-emitting diodes by applying a periodic texture on the surface”, Vol. 20, No. 20, pp.1724-1726, IEEE Photonics Technology Letters (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

26. G. J. Sheu, F.S. Hwu, J.C. Chen, J.K. Sheu, W.C. Lai,2008,  “The Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip”, Volume 155, Issue 10, pp. H836-H840, Journal of the Electrochemical Society (IF:2.427) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

27. J.-W. Shi, P-.Y. Chen, C.-C. Chen, J.-K. Sheu, W.-C. Lai, Yun-Chih Lee, Po-Shen Lee, Shih-Pu Yang, and Mount-Learn Wu, 2008, “Linear Cascade GaN Based Green Light Emitting Diodes with Invariant High-Speed/Power Performance under High-Temperature Operation”, Vol. 20, NO. 23, pp. 1896-1898, IEEE Photonics Technology Letters (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

28. J.-K. Sheu*, M.-L. Lee, Y. S. Lu, and K. W. Shu, 2008, ”Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for Improving Light Extraction Efficiency”, Vol.44, No.12, pp.1211-1218, IEEE Journal of Quantum Electronics (IF:2.48) (Rank:44/246 in Subject Categories of Engineering, Electrical & Electronic)

29. Wei-Chih Lai, Cheng-Huang Kuo, Wei-Yu Yen, Jinng-Kong Sheu, and Shoou-Jinng Chang^” Surface Properties of the AlGaN/GaN Superlattice Grown at Different Temperatures by Metalorganic Chemical Vapor Deposition”, 47, pp. 8730-8732, Japanese Journal of Applied Physics (IF:1.024)(Rank:57/118 in Subject Categories of Physics, applied)

30. S. E. Wu , T. H. Hsueh, C. P. Liu, J. K. Sheu, W. C. Lai, S. J. Chang, 2008,  “Non-lithographic nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams”, Vol. 5,No. 6, pp. 2186 – 2188, Physica Status Solidi (c)

2009

31. M. L. Lee, Ping-Feng Chi and J.K.Sheu*, 2009, ” Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio”, Vol.94, 013512, Applied Physics Letters (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied ).

32. C. M. Tsai, J. K. Sheu*, W.C. Lai , M. L. Lee, S. J. Chang , C. S. Chang, T. K. Ko and C. F. Shen, June, 2009 ” GaN-based LEDs output power improved by textured GaN/sapphire interface using in-situ SiH₄ treatment process during epitaxial growth”, IEEE Journal of Selected topics in Quantum Electronics, Vol.15, No.4,pp.1275-1280 (2009) (IF:3.466) (Rank:14/246 in Subject Categories of Engineering, Electrical & Electronic)

33. Tao-Hung Hsueh, Jinn-Kong Sheu*, Wei-Chi Lai, Yi-Ting Wang, Hao-Chung Kuo,  and Shing-Chung Wang, 2009, “Improvement of the efficiency of InGaN/GaN quantum well light emitting diodes grown with a pulsed trimethylindium flow process”, Vol.21, No.7, pp.414-416, IEEE Photonics Technology Letters (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

34. Jin-Kong Sheu*, Chih-Ciao Yang, Wei-Chih Lai, Kuo-Hua Chang, Li-Chi Peng and Ming-Lun Lee and Shang-Ju Tu, Mar.” Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers”, IEEE Electron Device Letter, vol. 30, No. 3, pp.225-227(2009) (IF:2.719) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

35. J.-W. Shi, Shi-Hao Guol, C.-S. Lin, J.-K. Sheu, K. H. Chang, W.-C. Lai, C.-H. Kuo, C.-J. Tun, and J.-I. Chyi,” The Structure of GaN-Based Transverse Junction Blue LED Array for Uniform Distribution of Injected Current/Carriers”, IEEE Journal of Selected topics in Quantum Electronics, Vol.15, No.4,pp.1292-1297(2009) (IF:3.466) (Rank:14/246 in Subject Categories of Engineering, Electrical & Electronic)

36. Chang, S. J.; Chen, W. S.; Shei, S. C.; Shen, C. F.; Ko, T. K.; Tsai, J. M.; Lai, W. C.; Sheu, J. K.; Lin, A. J.; Hung, S. C.” GaN-Based Power Flip-Chip LEDs With Cu Submount” IEEE Journal of Selected topics in Quantum Electronics, Vol.15, No.4,pp.1287-1291(2009) (IF:3.466) (Rank:14/246 in Subject Categories of Engineering, Electrical & Electronic)

37. Shi-Hao Guol, H.-W. Huang, C.-S. Lin, J.-K. Sheu, C.-J. Tin, C.-H. Kuo, and Jin-Wei Shi,” Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes”, Proc. SPIE, Vol. 7216, 721629 (2009) (EI)

38. Kenzo Fujiwara, Hirofumi Katou, Takao Inoue, Jinn-Kong Sheu ^“Asymmetric external field effects on photoluminescence efficiency in a blue (In,Ga)N quantum-well diode with an additional n -type electron reservoir layer”, 1–4, Physica Status Solidi (c)

39. Jyh-Chen Chen, Gwo-Jiun Sheu, Farn-Shiun Hwu, Hsueh-I Chen, Jinn-Kong Sheu, Tsung-Xian Lee, and Ching-Cherng Sun, 2009, ” Electrical-Optical Analysis of a GaN/Sapphire LED Chip by Considering the Resistivity of the Current-Spreading Layer”, Vol. 16, No. 2, pp. 213–215, Optical Review (IF:0.550)(Rank:54/71 in Subject Categories of Optics)

40. J. K. Sheu^*, K.H. Chang, M. L. Lee, J. F. Huang, K. S. Kang, W. L. Wang, W. C. Lai and T. H. Hsueh,^” Characterization of gallium-doped zinc oxide contact on n-type gallium nitride epitaxial layers” Journal of the Electrochemical Society, Vol. 156, Issue 8, H679-H683 (2009) (IF:2.427) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

41. Shoou-Jinn Chang, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, Wei-Chi Lai, Jinn-Kong Sheu, and A. J. Lin,” High-Brightness InGaN–GaN Power Flip-Chip LEDs” Journal of Lightwave Technology, Vol. 27, No. 12, June 15, pp.1985-1989(2009) (IF:2.259,Rank:10/71 in Subject Categories of Optics)

42. W. C. Lai, L. C. Peng, M. N. Chang, S. C. Shei, Y. P. Hsu, and J. K. Sheu,”GaN-Based LED with Embedded Microlens-like Structure”, Journal of the Electrochemical Society,   Vol. 156   No. 12   Pages: H976-H978( 2009) (IF:2.427) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

43. Wei-Chih Lai; Chen, P.H.; Chang, L.C.; Cheng-Huang Kuo; Jinn-Kong Sheu; Tun, C.J.; Shei, S.C ,”GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars, IEEE Photonics Technology Letters,   Vol. 21   No. 18   Pages: 1293-1295( 2009) (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

44. Li-Chi Peng; Wei-Chih Lai; Ming-Nan Chang; Shih-Chang Shei; Jinn-Kong Sheu” GaN-Based LEDs With GaN -Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads”, IEEE Photonics Technology Letters. , Volume: 21  Issue: 22, pp.1659-1661(2009) (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

45. Shih-Chang Shei, Wei-Chih Lai, Jinn-Kong Sheu, I-Hsiu Hung, and Shoou-Jinn Chang, ” The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads” Japanese Journal of Applied Physics Vol. 48, pp. 102103-1~102103-3(2009) (IF:1.024)(Rank:57/118 in Subject Categories of Physics, applied)

46. Yeh, C.Y.; Lai, W.C.; Hsueh, T.H.; Yang, Y.Y.; Sheu, J.K.; Ringer, S.P.; Gault, B,” Light Output Improvement of Oxide-Textured InGaN-Based Light-Emitting Diodes by Bias-Assisted Photoelectrochemical Oxidation With Imprint Technique”, IEEE Photonics Technology Letters,   Vol. 21,   No. 9-12   Pages: 718-720 (2009) (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

2010

47. P. H. Chen, W. C. Lai, L. C. Peng, C. H. Kuo, C. L. Yeh, J. K. Sheu, and C. J. Tun, “GaN-based LEDs with AZO:Y Upper Contact”, IEEE transaction on electron devices, Vol.57, No.1, pp.134-139, 2010. (IF:2.445)(Rank:20/108 in Subject Categories of Physics, Applied )

48. Li-Chi Peng, Wei-Chih Lai, Ming-Nan Chang, Tao-Hung Hsueh, Shih-Chang Shei and Jinn-Kong Sheu,”III-Nitride Based Light Emitting Diodes with GaN Micro-Pillars around Mesa and Patterned Substrate”, IEEE transaction on electron devices, Vol.57, No.1, pp.140-144, 2010. (IF:2.255)(Rank:20/118 in Subject Categories of Physics, Applied )

49. Shu-Yen Liu, J. K. Sheu*, Chun-Kai Tseng, Jhao-Cheng Ye, K.H. Chang, M.L. Lee and W.C. Lai,” Improved hydrogen gas generation rate of n-GaN photoelectrode with SiO₂ protection layer on the Ohmic contacts from the electrolyte” Journal of the Electrochemical Society, Vol. 157   No. 2   Pages: B266-B268 ( 2010) (IF:2.427) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

50. Kuo-Hua Chang, Jinn-Kong Sheu^* Ming-Lun Lee, Kai-Shun Kang, Jing-Fong Huang_, Wei-Li Wang and Wei-Chih Lai, J.J.Appl. Phys.,Vol.49, 04DF12 (2010) (IF:1.024)(Rank:57/118 in Subject Categories of Physics, applied)

51. C. H. Jang, J. K. Sheu*, C. M. Tsai, S. J. Chang, W.C. Lai, M. L. Lee, T. K. Ko, C. F. Shen, and S.C.Shei,” Improved Performance of GaN-based Blue LEDs with the InGaN Insertion Layer between the MQW Active Layer and the n-GaN Cladding Layer”  IEEE Journal of Quantum Electronics, Vol.46, No.4, pp.513-517(2010) (IF:2.48) (Rank:44/246 in Subject Categories of Engineering, Electrical & Electronic)

52. H.X. Tsao, S.T. Lin, H.C. Su, J.B. Horng, and J.K. Sheu*, “Erbium-doped  All-Fiber Green Up-conversion Amplified  Emission in Silica-Based Fiber System” J.J.Appl. Phys., Vol.49, 032701 (2010) (IF:1.024)(Rank:57/118 in Subject Categories of Physics, applied)

53. Liang-Jyi Yan, Chih-Chiao Yang, Ming-Lun Lee, Shang-Ju Tu ,Chih-Sung Chang and Jinn-Kong Sheu*,”AlGaInP/GaP heterostructures bonded with Si substrate to serve as solar cells and light-emitting diodes” Journal of the Electrochemical Society, Vol.157, No.4,  H452-H454 (2010) (IF:2.427) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

54. S. H. Tu, C. J. Lan, S.H. Wang, M. L. Lee*_, K. H. Chang, R. M. Lin, J. Y. Chang and J. K. Sheu*, “InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer”, Applied Physics Letters, Vol.96, No.13, 133504(2010) (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied )

55. P. H. Chen, Li Chuan Chang Tsai, C.H.  Lee, Y.C.  Wei-Chih Lai  Wu, M.-L.  Cheng-Huang Kuo and Jinn-Kong Sheu, “GaN-Based Light-Emitting Diodes With Pillar Structures Around the Mesa Region”,  IEEE Journal of Quantum Electronics, Vol.46, No.7, pp.1066-1071(2010) (IF:2.48) (Rank:44/246 in Subject Categories of Engineering, Electrical & Electronic)

56. W. C. Lai, L. C. Peng, C. C. Chen, J. K. Sheu and S. C. Shei, “AlGaN-based ultraviolet photodetector with micropillar structures”, Applied Physics Letters, Vol.96, No.10, 102104(2010) (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied )

57. Yun-Chorng Chang; Jinn-Kong Sheu and Yun-Li Li;  “Sub-Bandgap Laser Light-Induced Excess Carrier Transport Between Surface States and Two-Dimensional Electron Gas Channel in AlGaN/GaN Structure” IEEE Journal of Quantum Electronics, Vol.46, No.1, pp.112-115(2010) (IF:2.48) (Rank:44/246 in Subject Categories of Engineering, Electrical & Electronic)

58. Kuo-Hua Chang, Jinn-Kong Sheu*, Ming-Lun Lee*, Shang-Ju Tu, Chih-Ciao Yang, Huan-Shao Kuo, J. H. Yang and Wei-Chih Lai, ”Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy” Applied Physics Letters, vol.97, no. 1, 013502 (2010) (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied )

59. C. C. Yang, J. K. Sheu*, X. W. Liang, M. S. Huang, M. L. Lee*, K. H. Chang, S. J. Tu, F. W. Huang, and W. C. Lai, “Enhancement of The Conversion Efficiency of GaN-Based Photovoltaic Devices with AlGaN/InGaN Absorption Layers,” Applied Physics Letters, vol. 97, no. 2, 021113 (2010) (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied )

60. Shi, Jin-Wei, Huang, H. -W., Kuo, F. -M., Sheu, J. K., Lai, W. -C., Lee, M. L.,” Very-High Temperature (200 degrees C) and High-Speed Operation of Cascade GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer”, IEEE Photonics Technology Letters    Volume: 22    Issue: 14    Pages: 1033-1035  (2010) (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

61. Shu-Yen Liu, J. K. Sheu*, Jhao-Cheng Ye, S.J.Tu, Che-Kang Hsu, M.L. Lee*, C. H. Kuo and W.C. Lai,” Characterization of n-GaN with naturally textured surface for photoelectrochemical hydrogen generation” Journal of the Electrochemical Society, Vol.157, No.12, pp.H1106-H1109, 2010 (IF:2.48) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

62. Ming-Lun Lee*, T. S. Mue, J. K. Sheu*, K.H. Chang, S. J. Tu, and T. H. Hsueh,” Effect of thermal annealing on GaN metal-oxide-semiconductor capacitors with gallium oxide gate layer”, Journal of the Electrochemical Society, Vol.157,No.11, H1019-H1022 (2010) (IF:2.48) (Rank:1/17 in Subject Categories of Materials science, Coatings & Films)

63. Lai, Wei-Chih, Yang, Ya-Yu, Peng, Li-Chi, Yang, Shih-Wei, Lin, Yu-Ru, Sheu, Jinn-Kong,” GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures” Applied Physics Letters    Volume: 97    Issue: 8,   081103, 2010 (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied )

64. Jinn-Kong Sheu*, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai,“InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film “Optics Express, Vol. 18, Iss. S4, pp. A562–A567 (2010) (IF:3.753,Rank:3/71 in Subject Categories of Optics)

65. L.J. Yan, J. K. Sheu*, F. W. Huang and M. L. Lee,” Polarized edge emission from GaN-based light-emitting diodes sandwiched by dielectric/metal hybrid reflectors”, J. Appl. Phys., Vol. 18, 113102, 2010 (IF: 2.079)(Rank:24/118 in Subject Categories of Physics, Applied )

66. Hung-Pin Chen, Yu-Chieh Wen, Yi-Hsin Chen, Cheng-Hua Tsai, Kuang-Li Lee, Pei-Kuen Wei, Jinn-Kong Sheu, and Chi-Kuang Sun,” Femtosecond laser-ultrasonic investigation of plasmonic fields on the metal/gallium nitride interface” Appl. Phys. Lett. 97, 201102 (2010) (IF:3.841)(Rank:14/118 in Subject Categories of Physics, Applied )

67. Farn-Shiun Hwu, Jyh-Chen Chen, Sheng-Han Tu, Gwo-Jiun Sheu, Hsueh-I Chen, and Jinn-Kong Sheu,” A Numerical Study of Thermal and Electrical Effects in a Vertical LED Chip”, J. Electrochem. Soc.,Vol. 157, Issue 1, pp. H31-H37, (IF:2.427)2010

2011

68. C. C. Yang, J. K. Sheu*, C. H. Kuo, M. S. Huang, S. J. Tu, F. W. Huang, M. L. Lee*, Yu-Hsiang Yeh, X. W. Liang, and W. C. Lai,” Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates” IEEE Electron Device Letter, Vol.32,No.4, pp.536-538 (2011/04). (IF:2.605) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

69. Che-Kang Hsu, Jinn-Kong Sheu*, Jia-Kuen Wang, Ming-Lun Lee, Kuo-Hua Chang, Shang-Ju Tu, and Wei-Chih Lai,” Optical and Electrical Properties of µ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process” Applied Physics Express Vol.4, 032104 (2011/03). (IF:2.778) (Rank: 21/118 in Subject Categories of Physics, Applied )

70. Shi, Jin-Wei ; Huang, H-W ; Kuo, F-M ; Lai, W-C ; Lee, Ming-Lun, and Jinn-Kong Sheu,” Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical-Optical Pump-Probe Technique”, IEEE Transactions on Electron Devices,  Vol.58,No.2,PP.495-500 (2011/02). (IF:2.267) (Rank:34/247 in Subject Categories of Engineering, Electrical & Electronic)

71. Y. C. Ou, J. K. Sheu, Y. H. Chiu,* R. B. Chen,* and M. F. Lin*,”Influence of modulated fields on the Landau level properties of grapheme” Phys. Rev. B 83, 195405 (2011/05). (IF:3.774) (Rank:13/68 in Subject Categories of PHYSICS, CONDENSED MATTER )

72. Shi, Jin-Wei, Kuo, F. -M., Huang, H. -W., Sheu, Jinn-Kong, Yang, Chih-Ciao, Lai, Wei-Chih, Lee, Ming-Lung,” The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer”, IEEE Electron Device Letter,Vol. 32   Issue: 5   Pages: 656-658(2011/05). (IF:2.719) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

73. Hsu Che-Kang; Sheu Jinn-Kong; Wang Jia-Kuen; Lee Ming-Lun; Chang Kuo-Hua; Tu Shang-Ju; Lai Wei-Chih” Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling” Electrochem. Solid-State Lett. 14, H343 (2011/03). (IF:1.981) (Rank:14/26 in Subject Categories of ELECTROCHEMISTRY)

74. Jiun-Ting Chen, Wei-Chih Lai, Chi-Heng Chen, Ya-Yu Yang, Jinn-Kong Sheu, and Li-Wen Lai,” Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO₂ nanocomposite light-emitting devices” Optics Express, Vol. 19, Iss. 12, pp. 11873–11879 (2011/06) (IF:3.753,Rank:3/71 in Subject Categories of Optics)

75. Shang-Ju Tu, Jinn-Kong Sheu*, Ming-Lun Lee, Chih-Ciao Yang, Kuo-Hua Chang, Yu-Hsiang Yeh, Feng-Wen Huang, and Wei-Chih Lai,” Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells” Optics Express Vol. 19, Iss. 13, pp. 12719–12726 (2011/06) (IF:3.753,Rank:3/71 in Subject Categories of Optics)

76. Ming-Lun Lee, T. S. Mue, F.W. Huang, J. H. Yang, and J. K. Sheu,” High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer” Optics Express Vol. 19, Iss. 13, pp. 12658–12663 (2011/06) (IF:3.753,Rank:3/71 in Subject Categories of Optics)

77. Chih-Ciao Yang, C. H. Jang, Jinn-Kong Sheu^* ,Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Yu-Hsiang Yeh and Wei-Chih Lai, “Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration” Optics Express, Vol. 19, Iss. S4, pp. A695–A700 (2011/07) (IF:3.753,Rank:3/71 in Subject Categories of Optics)

78. Yu-Chieh Wen, Shi-Hao Guol, Hung-Pin Chen, Jinn-Kong Sheu, and Chi-Kuang Sun,” Femtosecond ultrasonic spectroscopy using a piezoelectric nanolayer: Hypersound attenuation in vitreous silica films” Appl. Phys. Lett. 99, 051913 (2011/08). (IF:3.554)(Rank:14/118 in Subject Categories of Physics, Applied )

79. C. H. Jang, J. K. Sheu*, S. J. Chang, M. L. Lee, C. C. Yang, S. J. Tu, F. W. Huang, and C. K. Hsu,” Effect of Growth Pressure of Undoped GaN Layer on the ESD Characteristics of GaN-Based LEDs Grown on Patterned Sapphire” IEEE Photonics Technology Letters, Vol. 23, No. 14, pp.968-970, (2011/07). (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

80. J. K. Sheu*, S. J. Tu, M. L. Lee, Y. H. Yeh, C. C. Yang, F. W. Huang, W. C. Lai, C. W. Chen, and G. C. Chi,” Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers” IEEE Electron Device Letters, Vol. 32, No. 10, pp.1400-1402, 2011/10. (IF:2.719) (Rank:21/246 in Subject Categories of Engineering, Electrical & Electronic)

81. J.-W. Shi, F.-M. Kuo, Che-Wei Lin, Wei Chen, L.-J. Yan, and J.-K. Sheu,” Investigation of the Efficiency-Droop Mechanism in Vertical Red Light-Emitting Diodes Using a Dynamic Measurement Technique” IEEE Photonics Technology Letters, Vol. 23, No. 19, Sept. 15, (2011/11). (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

82. Shu-Yen Liu, Yu-Chuan Lin, Jhao-Cheng Ye, S. J. Tu, F. W. Huang, M. L. Lee, W. C. Lai and J. K. Sheu*,” Hydrogen gas generation using n-GaN photoelectrodes with immersed Indium Tin Oxide ohmic contacts” Optics Express Vol. 19, Iss. S6, A1196-1201(2011/11). (IF:3.753)(Rank:3/71 in Subject Categories of Optics)

83. Feng-Wen Huang, Jinn-Kong Sheu^*, Ming-Lun Lee, Shang-Ju Tu, Wei-Chih Lai, Wen-Che Tsai , and Wen-Hao Chang,” Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection”, Optics Express Vol. 19, Iss. S6, A1211-A1218 (2011/11)5783297 abstract.(IF:3.753,Rank:3/71 in Subject Categories of Optics)

84. Wei-Chih Lai;  Ya-Yu Yang;   Ying-Hong Chen and Jinn-Kong Sheu,” GaN-Based Light-Emitting Diodes With Air Gap Array and Patterned Sapphire Substrate” IEEE Photonics Technology Letters, Vol. 23, No. 17, pp.1207-1209,(2011/09). (IF:1.989)(Rank:56/246 in Subject Categories of Engineering, Electrical & Electronic)

2012

85. Liang-Jyi Yan, Cheng Huang Kuo, Jinn-Kong Sheu*, Ming-Lun Lee, Wei-Chun Tseng, “Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN“ Journal of Alloys and Compounds, Vol.516,38-40 (2012/03).

86. Y.C. Yang, Jinn-Kong Sheu*, Ming-Lun Lee, Shang-Ju Tu, Feng-Wen Huang, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko, “Vertical InGaN light-emitting diodes with a sapphire-face-up structure”, Optics Express Vol. 20, Iss. 5, A119-A124(2012/09)

87. Y.C.Yang, Jinn-Kong Sheu*, Ming-Lun Lee, Che-Kang Hsu, Shang-Ju Tu, Shu-Yen Liu, C.C.Yang and Feng-Wen Huang,”Vertical InGaN light-emitting diodes with Ag paste as bonding layer” Microelectronics Reliability, Vol.52, No.5, pp.949-951, May (2012/05). (DOI:10.1016/j.microrel.2011.06.067) (IF:1.101) (Rank:76/118 in Subject Categories of Physics, Applied)

88. Shu-Yen Liu, J. K. Sheu*, M. L. Lee, Yu-Chuan Lin, S. J. Tu,¹ F. W. Huang, and W. C. Lai,”Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation”,Optics Express Vol. 20, Iss. S2, pp. A190–A196 (2012/01)

89. S. J. Tu, M. L. Lee, Y. H. Yeh, F. W. Huang, P. C. Chen, W. C. Lai C.W. Chen, G. C. Chi and J. K. Sheu*,“ Improved output power of InGaN LEDs by lateral overgrowth on Si-implanted n-GaN surface to form air gaps”, IEEE Journal of Quantum Electronics,  Vol.48(8), pp.1004-1009(2012/08)

90. Ching-Hsueh Chiu, Lung-Hsing Hsu ; Chia-Yu Lee ; Chien-Chung Lin ; Bo-Wen Lin ; Shang-Ju Tu ; Yan-Hao Chen ; Che-Yu Liu ; Wen-Ching Hsu ; Yu-Pin Lan ; Jinn-Kong Sheu ; Tien-Chang Lu ; Gou-Chung Chi ; Hao-Chung Kuo ; Shing-Chung Wang ; Chun-Yen Chang “Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates” IEEE Photonics Technology Letters, Vol. 24, No. 14, 1212-1214, 2012/07.

91. Jiun-Ting Chen, Wei-Chih Lai, Yu-Jui Kao, Ya-Yu Yang, and Jinn-Kong Sheu,” Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes” Optics Express Vol. 20, Iss. 5, pp. 5689-5695 (2012/02)

92. Lin, C.-W. ; Chen, W. ; Sheu, J.-K. ; Lin, C.-L. ; Li, Y.-L. ; Bowers, J. E. ; Shi, J.-W. ; Vinogradov, J. ; Kruglov, R. ; Ziemann, O.” GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication” Photonics Journal, IEEE, Vol.4, No.5,pp.1520-1529,(2012/07-31).

93. Jiun-Ting Chen, Wei-Chih Lai, Chi-Heng Chen, Ya-Yu Yang, Jinn-Kong Sheu, Kun-Wei Lin, and Li-Wen Lai,” Sputtered ZnO–SiO₂ nanocomposite light-emitting diodes with flat-top nanosecond laser treatment” Optics Express Vol. 20, Iss.18, pp. 19635-19642 (2012/08)

94. Hung-Pin Chen, Yueh-Chun Wu, Pierre Adrien Mante, Shang-Ju Tu, Jinn-Kong Sheu, and Chi-Kuang Sun” Femtosecond excitation of radial breathing mode in 2-D arrayed GaN nanorods” Optics Express Vol. 20, Iss. 15, pp. 16611-16617 (2012/07-09)

95. Shu-Yen Liu, J. K. Sheu*, Yu-Chuan Lin, S. J. Tu, F. W. Huang, M. L. Lee, and W. C. Lai,” Mn-doped GaN as photoelectrodes for the photoelectrolysis of water under visible light” Optics Express Vol. 20, Issue 19, pp.A678-A683 (2012/08)

96. Tsai, Sing-Jyun; Sheu, Jinn-Kong; Ho, Ching-Hong; Chiu, Yu-Huang; Lin, Ming-Fa,” Modulation Effects of Periodic Potentials on the Electronic Properties of Bilayer Bernal Graphene: Tight-Binding Model”, J. Phys. Society of Japan Vol. 81 Iss. 1, 014705(2012/01)

97. Jinn-Kong Sheu*, Shang-Ju Tu, Yu-Hsiang Yeh, Ming-Lun Lee, and Wei-Chih Lai, “Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate” Appl. Phys. Lett. 101, 151103 (2012/10)

98. Jiun-Ting Chen, Wei-Chih Lai, C.Y. Chang, Jinn-Kong Sheu, W.C.Sen, “GaN-based light emitting diodes with micro- and nano-patterned structures by femtosecond laser nonlinear decomposition” Appl. Phys. Lett. 101, 131103 (2012/09)

99. K.P.Hsueh, Y.C.Chang, W.Y.Lin, P.C.Cheng, H.C.Chiu, J.K.Sheu and Y.H.Yeh,” High-temperature stability of postgrowth-annealed Al-doped MgxZn1-xO films without the phase separation effect”, Journal of Vacuum Science & Technology B, Vol.30, no.6, 061201(2012/11)

100. Feng-Wen Huang, Jinn-Kong Sheu,* Shang-Ju Tu, Po-Cheng Chen, Yu-Hsiang Yeh, Ming-Lun Lee, Wei-Chih Lai, Wen-Che Tsai, and Wen-Hao Chang,”Optical properties of Mn in regrown GaN-based epitaxial layers” Optical Materials Express, Vol. 2 Iss. 4 pp. 469-477, APR. 1, 2012/04.

101. Chi, Kai-Lun ; Shi, Jin-Wei ; Jang, C. H. ; Kivisaari, Pyry; Oksanen, Jani; Tulkki, Jukka ; Lee, M. L.; Sheu, J. K.,” Carrier Dynamics in High-Efficiency Blue GaN Light-Emitting Diodes Under Different Bias Currents and Temperatures” IEEE Photonics Journal, Vol.4, pp. 1870-1880 (2012/10)

102. Wun, Jhih-Min, Lin, Che-Wei, Chen, Wei, Sheu, J. -K., Lin, Ching-Liang, Li, Yun-Li, Bowers, John E., Shi, Jin-Wei, Vinogradov, Juri, Kruglov, Roman, Ziemann, Olaf,” GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication,” IEEE Photonics Journal, Vol.4, pp. 1520-1529 (2012/10)

103. Y.C. Yang , Jinn-Kong Sheu*, Ming-Lun Lee, C. H. Yen, Wei-Chih Lai, Schang Jing Hon, and Tsun Kai Ko, “Vertical InGaN light-emitting diodes with a retained patterned sapphire layer,” Opt. Express 20(S6), A1019–A1025 (2012/11)

 

2013

104. Jinn-Kong Sheu*, Feng-Wen Huang, Yu-Hsuan Liu, P.C.Chen, Yu-Hsiang Yeh, Ming-Lun Lee* and Wei-Chih Lai,” Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy” Appl. Phys. Lett. 102, 071107 (2013/02)

105. Jinn-Kong Sheu*, Yu-Hsiang Yeh, Shang-Ju Tu, Ming-Lun Lee*, P.C.Chen and Wei-Chih Lai,” Improved output power of GaN-based blue LEDs by forming air voids on Ar-implanted sapphire substrate”, Journal of Lightwave Technology”, Vol.31, No.8, pp.1318-1322(2013/04)

106. Liu, Han-Yin; Chou, Bo-Yi; Hsu, Wei-Chou; Lee, Ching-Sung ; Sheu, Jinn-Kong ;Ho, Chiu-Sheng, “Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique”, IEEE Transactions on Electron Devices  Vol. 60 Issue: 1 ,pp. 213-220(2013/01)

107. Hou, Jei-Li; Chang, Shoou-Jinn; Chen, Meng-Chu ; Liu, C. H. ; Hsueh, Ting-Jen; Sheu, Jinn-Kong ; Li, Shuguang,” GaN-Based Planar p-i-n Photodetectors With the Be-Implanted Isolation Ring”, IEEE Transactions on Electron Devices  Vol. 60   Issue: 3   pp.1178-1182(2013/03)

108. Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P.C.Chen, Ming-Jui Wu, Wei-Chih Lai, and Jinn-Kong Sheu* ,“ Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates”, Optics Express, Vol. 21, Issue S5, pp. A864-A871 (2013/09)

109. Jinn-Kong Sheu*, Feng-Wen Huang, Chia-Hui Lee, Ming-Lun Lee, Yu-Hsiang Yeh, Po-Cheng Chen and Wei-Chih Lai” Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer” Appl. Phys. Lett., 103, 063906 (2013/08)

110.  Chi.K.L.,Yeh, S.-T. ; Yeh, Y.-H. ; Lin, K.-Y. ; Shi, J.-W. ; Wu, Y.-R. ; Lee, M.L. ; Sheu, J.-K.” GaN-Based Dual-Color LEDs With p-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities”  IEEE Transactions on Electron Devices, Vol.60, No.9, pp.2821 – 2826(2013/09)

111. Jih-Yuan Chang, Fang-Ming Chen, Yen-Kuang Kuo, Ya-Hsuan Shih, Jinn-Kong Sheu, Wei-Chih Lai, and Heng Liu,” Numerical study of the suppressed efficiency droop in blue InGaN LEDs with polarization-matched configuration” Optics Letters, Vol. 38, Issue 16, pp. 3158-3161 (2013/08)

112. Yu-Lin Tsai, Chien-Chung Lin^, Hau-Vei Han, Chun-Kai Chang, Hsin-Chu Chen, Kuo-Ju Chen, Wei-Chi Lai, Jin-Kong Sheu, Fang-I Lai, Peichen Yu, Hao-Chung Kuo,” Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors” Solar Energy Materials and Solar Cells, Vol. 117, pp. 531–536(2013/10)

113. Kung-Hsuan Lin, Dzung-Han Tsai, Kuan-Jen Wang, Sheng-Hui Chen, Kai-Lun Chi, Jin-Wei Shi, Po-Cheng Chen, and Jinn-Kong Sheu,” Acoustic spectroscopy for studies of vitreous silica up to 740 GHz” AIP Advances 3, 072126 (2013/07);

114. Shu-Yen Liu, J. K. Sheu*, Yu-Chuan Lin, Yu-Tong Chen, S. J. Tu, M. L. Lee, and W. C. Lai,” InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting”, Optics Express, Vol. 21, Issue S6, pp. A991-A996 (2013/11)

115. Yu-Hsiang Yeh, Jinn-Kong Sheu*, Ming-Lun Lee, Po-Cheng Chen, Yu-Chen Yang, Cheng-Hsiung Yen and Wei-Chih Lai,” InGaN flip-chip light-emitting diodes with embedded air voids as light-scattering layer”, IEEE Electron Device Letters,  Vol. 34   Issue: 12, pp.1542-1544 (2013/12)

116. Yao, Yung-Chi,Tsai, Meng-Tsan, Huang, Chun-Ying, Lin, Tai-Yuan*, Sheu, Jinn-Kong*, Lee, Ya-Ju*,” Efficient collection of photogenerated carriers by inserting double tunnel junctions in III-nitride p-i-n solar cells” Appl. Phys. Lett., 103, No.19, 193503 (2013)

2014

117. Tsao, Hong-Xi ; Chang, Chun-Hsiang;Lin, Shih-Ting; Sheu, Jinn-Kong* ; Tsai, Tzong-Yow,” Passively gain-switched and self mode-locked thulium fiber laser at 1950 nm” Optics and Laser Technology, Vol. 56, pp.354-357(2014/03)

118. Mante, Pierre-Adrien; Chen, Chien-Cheng; Wen, Yu-Chieh ; Sheu, Jinn-Kong; Sun, Chi-Kuang,” Thermal Boundary Resistance between GaN and Cubic Ice and THz Acoustic Attenuation Spectrum of Cubic Ice from Complex Acoustic Impedance Measurements”, Phys. Review Lett.,Vol.111. No.22. 225901(2013/11)

119. Hsueh, Kuang-Po; Cheng, Po-Wei ; Lin, Wen-Yen ; Chiu, Hsien-Chin ;Wang, Hsiang-Chun, Sheu, Jinn-Kong ; Yeh, Yu-Hsiang,”Temperature-Dependent Current-Voltage Characteristics of Al-Doped MgxZn1-xO/AlGaN n-p Junction Diodes” ECS Journal of Solid State Science and Technology, Vol.3, No.4,Q65-Q68, 2014/02.

120. Sheu, Jinn-Kong*, Fu-Bang Chen, Shou-Hung Wu, Ming-Lun Lee, Po-Cheng Chen, and Yu-Hsiang Yeh,“ Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns”, Optics Express, Vol. 22, Issue S5, pp. A1222-A1228 (2014/08)

121. Shoou-Jinn Chang, Ya-Ling Wu, Wen-Yin Weng, Yo-Hong Lin, Wei-Kang Hsieh, Jinn-Kong Sheu and Cheng-Liang Hsu," Ga₂O₃ Films for Photoelectrochemical Hydrogen Generation", J. Electrochem. Soc., Vol. 161, issue 9, H508-H511(2014)

122. Jinn-Kong Sheu*, Ming-Lun Lee and Yu-Cheng Lin,” Surface plasmon-enhanced GaN metal–insulator–semiconductor ultraviolet detectors with Ag nanoislands embedded in a silicon dioxide gate layer” IEEE Journal of Selected Topics in Quantum Electronics, Vol.20, No.6, pp. 3801005 (2014/12)

123. Ming-Lun Lee, Yu-Hsiang Yeh, Kuo-Hua Chang, P.C.Chen, Wei-Chih Lai and Jinn-Kong Sheu*,” Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures”, IEEE Journal of Selected Topics in Quantum Electronics, Vol.20, No.6, pp. 3802705 (2014/12)

124. Wei-Ting Hsu, Ting-Yen Hsieh, Hsin-Feng Chen, Feng-Wen Huang, Po-Cheng Chen, Jinn-Kong Sheu, and Wen-Hao Chang, “Determination of s-d exchange coupling in GaMnN by time-resolved Kerr rotation spectroscopy”, Phys. Rev. B 90, 125205(2014)

125. Du, Chia-Fong, Lee, Chen-Hui, Cheng, Chao-Tsung, Lin, Kai-Hsiang, Sheu, Jin-Kong Sheu, Hsu-Cheng, Shu,” Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction,”Nanoscale Research Letters, Vol.9, 446(2014/08)

126. W. C. Lai, M. H. Ma, B. K. Lin, B. H. Hsieh, Y. R. Wu, and J. K. Sheu," Photoelectrochemical hydrogen generation with linear gradient Al composition dodecagon faceted AlGaN/n-GaN electrode" Optics Express, Vol. 22, Issue S7, pp. A1853-A1861 (2014/11)

127. Kuang-Po Hsueh, Po-Wei Cheng, Wen-Yen Lin, Hsien-Chin Chiu, Hsiang-Chun Wang, Jinn-Kong Sheu and Yu-Hsiang Yeh," Thermal stability of post-growth-annealed Ga-doped MgZnO films grown by the RF sputtering method" MRS Proceedings / Volume 1675 pp.41-44 (2014/05).

128. Pierre-Adrien Mante,Chien-Cheng Chen,Yu-Chieh Wen,Hui-Yuan Chen,Szu-Chi Yang,Yu-Ru Huang,I. -Ju Chen,Yun-Wen Chen,Vitalyi Gusev,Miin-Jang Chen, Jer-Lai Kuo,Jinn-Kong Sheu and Chi-Kuang Sun, “Probing Hydrophilic Interface of Solid/Liquid-Water by Nanoultrasonics” Scientific ReportsVolume:, Vol.4,6249(2014)

129. Lee, Ya-Ju, Yang, Zu-Po, Lo, Fang-Yuh, Siao, Jhih-Jhong, Xie, Zhong-Han, Chuang, Yi-Lun, Lin, Tai-Yuan, Sheu, Jinn-Kong*,”Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition,” APL MATERIALS, Vol.2, No.5, 056101 2014/05)

2015

130. Pierre-Adrien Mante,Yu-Ru Huang,Szu-Chi Yang,Tzu-Ming Liu,Alexei A. Maznev,Jinn-Kong Sheu,Chi-Kuang Sun," THz acoustic phonon spectroscopy and nanoscopy by using piezoelectric semiconductor heterostructures" Ultrasonics,Vol. 56, pp. 52–65(02/2015)

131. Jinn-Kong Sheu*, Fu-Bang Chen, Yen-Chin Wang, Chih-Chiang Chang, Shih-Hsien Huang, Chun-Nan Liu, and Ming-Lun Lee,” Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single redphosphor”, OPTICS EXPRESS, Vol. 23, No. 7 A232-A239(2015/04) 19/97, OPTICS; IF:3.669

132. Jinn-Kong Sheu*, Fu-Bang Chen, Wei-Yu Yen, Yen-Chin Wang, Chun-Nan Liu, Yu-Hsiang Yeh, and Ming-Lun, Lee “GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure”, OPTICS EXPRESS, Vol. 23, No. 7 A371-A381(2015/04) 19/97, OPTICS; IF:3.669

133. Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P. C. Chen, Wei-Chih Lai, and Jinn-Kong Sheu*” White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids” OPTICS EXPRESS, Vol. 23, No. 7 A401-A412(2015/04) 19/97, OPTICS; IF:3.669

134. Yu-Hsiang Yeh, Jinn-Kong Sheu*, Ming-Lun Lee, Wei-Yu Yen, Li-Chi Peng, Chun-Yi Yeh, Po-Hsun Liao, Po-Cheng Chen, and Wei-Chih Lai,” Vertical GaN-based LEDs with naturally textured surface formed by patterned sapphire substrate with self-assembled Ag nanodots as etching mask,” IEEE Transactions on Electron Devices, Vol. 62, no. 9, Sept. pp.2919-2923, (2015/09)

53/154, PHYSICS, APPLIED; IF:2.913

135. Hsueh, Kuang-Po, Huang, Chao-Yung, Chiu, Hsien-Chin, Sheu, Jinn-Kong, Yeh, Yu-Hsiang, “Effects of Temperature on Niobium-Doped MgZnO Films Grown Using Radio-Frequency Magnetron Sputtering,” ECS Journal of Solid-State Science and Technology, Vol.4, no.8, Q96-Q100,(2015/08).

2016

136. Fu-Bang Chen, Jinn-Kong Sheu*,Wei-Yu Yen, Yen-Chin Wang, Shih-Hsien Huang,  Yu-Hsiang Yeh, Chih-Chiang Chang and Ming-Lun Lee” GaN-based UV light-emitting diodes with a green indicator through selective-area photon recycling” IEEE Transactions on Electron Devices, Vol. 63, No. 3, pp.1122-1127(2016/03) 53/154, PHYSICS, APPLIED; IF:2.913

137. Ya-Hsuan Shih, Jih-Yuan Chang, Jinn-Kong Sheu*, Yen-Kuang Kuo, Fang-Ming Chen, Ming-Lun Lee, and Wei-Chih Lai“ Design of Hole Blocking and Electron Blocking Layers in Al_xGa_1-xN-based UV Light-Emitting Diodes” IEEE Transactions on Electron Devices , Vol. 63, No. 3, pp.1141-1147(2016/03) 53/154, PHYSICS, APPLIED; IF:2.913

138. Jinn-Kong Sheu*, Po-Cheng Chen, Yu-Hsiang Yeh, Shih-Hsun Kuo, Ming-Lun Lee, Po-Hsun Liao and Wei-Chih Lai “Mask-free regrowth of GaN p-i-n structure on selective-area Si-implanted n-GaN template layer”ACTA Materialia, Vol.107, pp.17-25(2016/04). 1/79, METALLURGY & METALLURGICAL ENGINEERING; IF:7.656

139. Yung-Chi Yao,  Zu-Po Yang, Jung-Min Hwang,Yi-Lun Chuang,  Chia-Ching Lin, Jing-Yu Haung,Chun-Yang Chou, Jinn-Kong Sheu, Meng-Tsan Tsai and Ya-Ju Lee,” Enhancing UV-emissions through optical and electronic dual-function tuning of Ag nanoparticles hybridized with n-ZnO nanorods/p-GaN heterojunction light-emitting diodes” Nanoscale, 8, 4463-4474(2016/02) 23/154, PHYSICS, APPLIED; IF:6.895

140. Fan Jun Wei, Yu-Hsiang Yeh, Jinn-Kong Sheu, and Kung-Hsuan Lin,” THz Acoustic Spectroscopy by using Double Quantum Wells and Ultrafast Optical Spectroscopy” Scientific Reports, Vol.6, 28577,2016 | DOI: 10.1038/srep28577

141. Jin-Wei Shi, Kai-Lun Chi, Jhih-Min Wun, J. E. Bowers, Ya-Hsuan Shih, and Jinn-Kong Sheu ,”III-Nitride Based Cyan Light-Emitting Diodes with GHz Bandwidth for High-Speed Visible Light Communication” IEEE Electron Device Letters   37(7), pp.894-897, July 2016 DOI:10.1109/LED.2016.2573265

142. Jinn-Kong Sheu*, Po-Cheng Chen, Cheng-Lun Shin,  Ming-Lun Lee, Po-Hsun Liao, and Wei-Chih Lai,”Manganese-doped AlGaN/GaN heterojunction solar cells with intermediate band absorption” Solar Energy Materials and Solar Cells, Volume 157, December 2016, Pages 727–732, http://dx.doi.org/10.1016/j.solmat.2016.07.047 22/154, PHYSICS, APPLIED; IF:6.984

2017

143. Yen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, Fang-Ming Chen, Ming-Lun Lee, and Jinn-Kong Sheu*,” Theoretical Investigation of Efficient Green Tunnel-Junction Light-Emitting Diodes” IEEE Electron Device Letters Vol.38(1), pp.75-78, Jan. 2017 10.1109/LED.2016.2631634. 48/266, ENGINEERING, ELECTRICAL & ELECTRONIC; IF:4.221

144. Juri Vinogradov,Roman Kruglov, Rainer Engelbrecht, Olaf Ziemann, Jinn-Kong Sheu, Kai-Lun Chi, Jhih-Min Wun, Jin-Wei Shi, “GaN-Based Cyan Light-Emitting Diode with up to 1-GHz Bandwidth for High-Speed Transmission Over SI-POF” IEEE Photonics Journal, .Vol.9, Issue: 3, June 2017 DOI: 10.1109/JPHOT.2017.2693207

145. Tsung-Chi Hung ; Yu-Ru Huang ; Jinn-Kong Sheu ; Chi-Kuang Sun,” How thin should a vitreous silica layer be for boson peak measurement?” Proc. SPIE 10102, Ultrafast Phenomena and Nanophotonics XXI, 101021K (April 19, 2017); doi:10.1117/12.2249586

146. Kuang-Po Hsuehmailto:kphsueh@mail.vnu.edu.tw, Hsien-Chin Chiu, Jinn-Kong Sheu,Yu-Hsiang Yeh,” Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors,” Quant Electron Vol.48, 501 (2016/10) doi:10.1007/s11082-016-0773-x

147. J. K. Sheu^*, P. H. Liao, T.C. Huang, K.J. Chiang, W. C. Lai and M. L. Lee^*,”InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO ₂ reduction to formic acid” Solar Energy Materials and Solar Cells, Vol.166, pp 86–90, July 2017. https://doi.org/10.1016/j.solmat.2017.03.014 22/154, PHYSICS, APPLIED; IF:6.984

148. M.L. Lee, Y.H. Yeh, Z.Y. Liu, K.J. Chiang, J.K. Sheu*,” Planar GaN-Based Blue Light-Emitting Diodes With Surface pn Junction Formed by Selective-Area Si-Ion Implantation”, IEEE Transactions on Electron Device, Vol.64, No.10, 4156 - 4160 (2017/10) 53/154, PHYSICS, APPLIED; IF:2.913

149. Yen-Kuang Kuo, Ya-Hsuan Shih, Jih-Yuan Chang, Wei-Chih Lai, Heng Liu, Fang-Ming Chen, Ming-Lun Lee, Jinn-Kong Sheu*, Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions”, Optics Express, Vol.25, No.16, A777-784(2017/08) http://doi.org/10.1364/OE.25.00A777 19/97, OPTICS; IF:3.669

150. Y.T. Chen, C.Y. Yang, P.C. Chen, J.K. Sheu, K.H. Lin,”Carrier dynamics of Mn-induced states in GaN thin films”, Scientific Reports, Vol.7, 5788 (2017/07)  doi:  10.1038/s41598-017-06316-7

151. Jinn-Kong Sheu*, Po-Hsun Liao, Hsin-Yan Cheng, and Ming-Lun Lee*,”Photoelectrochemical hydrogen generation from water using undoped GaN with selective-area Si-implanted stripes as photoelectrodes” J. Mater. Chem. A, 2017,5, 22625-22630 (2017/10) (http://dx.doi.org/10.1039/C7TA07155H). 8/112, ENERGY & FUELS; IF:11.3

152. H.-Y. Chen, Y.-R. Huang, H.-Y. Shih, M.-J. Chen,  J.-K. Sheu, and C.-K. Sun, “Extracting elastic properties of an atomically thin interfacial layer by time-domain analysis of femtosecond acoustics” Appl. Phys. Lett. 111, 213101 (2017/11); https://doi.org/10.1063/1.4999369

153. Chih-Chiang Shen, Meng-Yu Weng, Jinn-Kong Sheu, Yi-Ting Yao, and Chi-Kuang Sun,” In Situ Monitoring of Chemical Reactions at a Solid−Water Interface”, J. Phys. Chem. Lett., 8, 5430-5437(2017/10)

2018

154. Ya-Hsuan Shih, Jih-Yuan Chang, Yen-Kuang Kuo, Fang-Ming Chen, Man-Fang Huang, Ming-Lun Lee, and Jinn-Kong Sheu*,”Design of GaN-Based Multi-Color Tunnel-Junction Light-Emitting Diodes” IEEE Transactions on Electron Devices ,  Vol. 65, NO. 1, pp.165-171, Jan. (2018) DOI: 10.1109/TED.2017.2773660 53/154, PHYSICS, APPLIED; IF:2.913

155. Ming-Lun Lee, Feng-Wen Huang, Po-Cheng Chen, and Jinn-Kong Sheu^*” GaN intermediate band solar cells with Mn-doped absorption layer,” Scientific Reports, Vol. 8, Article number: 8641 (2018/06) https://doi.org/10.1038/s41598-018-27005-z. 17/71, ULTIDISCIPLINARY SCIENCES; IF:3.998

156. W.Y. Hsu, Y.C. Lian, P.Y. Wu, W.M. Yong, J.K. Sheu, K.L. Lin, Y.C. Wu,” Suppressing the initial growth of sidewall GaN by modifying micron-sized patterned sapphire substrate with H3PO4-based etchant”, Micromachines 9 (12), 622(2018)

2019

157. Y.J. Lee*, T.W. Yeh, Z.P. Yang, Y.C. Yao, C.Y. Chang, M.T. Tsai*, J.K. Sheu*,” A curvature-tunable random laser” Nanoscale, 11, 3534-3545 (2019/01) 23/154, PHYSICS, APPLIED; IF:6.895

158. Fu-Bang Chen, Kai-Lun Chi, Wei-Yu Yen, Jinn-Kong Sheu*, Ming-Lun Lee, Jin-Wei Shi,” Investigation on Modulation Speed of Photon-recycling White Light-emitting Diodes with Vertical-conduction Structure”, J. Lightwave Technol., 37, No. 4, 1225-1230 (2019/02) 14/97, OPTICS; IF:4.288

159. P.V. Wadekar, C.W. Chang, Y.J. Zheng, S.S. Guo, W.C. Hsieh, C.M. Cheng, M.H. Ma, W.C. Lai, J.K. Sheu, Q.Y. Chen, L.W. Tu,” Mn valence state mediated room temperature ferromagnetism in nonpolar Mn doped GaN”, Applied Surface Science, 473, 693-698(2019/04)

160. Ming-Lun Lee, Shih-Sian Wang, Yu-Hsiang Yeh, Po-Hsun Liao & Jinn-Kong Sheu*,” Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective arearegrowth”, Scientific Reports, 9, 3243(2019/03) 17/71, MULTIDISCIPLINARY SCIENCES; IF:3.998

161. Ming-Lun Lee, Po-Hsun Liao, Guan-Lun Li, Hung-Wei Chang, Chi-Wing Lee & Jinn-Kong Sheu*, Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater, Solar Energy Materials and Solar Cells, Vol.202, pp 110153–90,( 2019/08). https://doi.org/10.1016/j.solmat.2019.110153 22/154, PHYSICS, APPLIED; IF:6.984

162. Ya-Ju Lee*, Ting-Wei Yeh, Chen Zou, Zu-Po Yang, Jia-Wen Chen, Pei-Lun Hsu, Ji-Lin Shen, Chun-Chieh Chang*, Jinn-Kong Sheu* Lih Y. Lin,” Graphene Quantum Dot Vertical Cavity Surface-Emitting Lasers, ACS Photonics, 2019, 6(11), 2894-2901. 9/97, OPTICS; IF:7.5

163. F.J. Wei, R.A. Mole, S.K. Karna, J.-W. Shi, J.-K. Sheu, K.-H. Lin, “Verification of complex acoustic mismatch model in sub-THz regime”, Applied Physics Letters, 114, 151106 (2019/04) 37/154, PHYSICS, APPLIED; IF: 3.597

164. W.Y. Hsu, Y.T. Kuo, S.S. Hung, P.Y. Wu, J.K. Sheu, K.L. Lin, Y.C.S Wu,” Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant,” ECS Journal of Solid State Science and Technology, 9 (1), 016012(2019/10)

2020

165. Ming-Lun Lee, Po-Hsun Liao, Hsin-Yan Cheng, Wei-Yu Yen, and Jinn-Kong Sheu*, “UV light-emitting diodes grown on GaN templates with selective-area Si implantation”, Optics Express, 28, No.4, 4674-4685(2020/02) 19/97, OPTICS; IF:3.38

166. CK Sun, YT Yao, CC Shen, MH Ho, TC Lu, JK Sheu, “Observation of Femtosecond Acoustic Anomaly in a Solid Liquid Interface”, Journal of Physical Chemistry C, 124, 2987−2993(2020/02) 57/159, CHEMISTRY, PHYSICAL; IF:4.126

167. Jinn-Kong Sheu*, Po-Hsun Liao, Yen-Cheng Lee, Huang-Kai Wang, and Ming-Lun Lee*,” Photoelectrochemical Generation of Hydrogen and Formic Acid Using GaN Films Decorated With TiO₂/Ag Nanoparticles Composite Structure as Photoelectrodes” Journal of Physical Chemistry C, 124, 17, 9591-9598(2020/04) 57/159, CHEMISTRY, PHYSICAL; IF:4.126

168. B Sriram, Kogularasu Sakthivel, Sea-Fue Wang, Jinn-Kong Sheu*,” Rationally Designed RGO@ CuO@ Mn2O3; As an Excellent Electrocatalyst for the Rapid and Real-time Detection of 2-Nitrophenol” New Journal of Chemistry, 44, 12465-12472 (2020/06) IF:3.591, 75/179, CHEMISTRY, MULTIDISCIPLINARY; IF:3.288

169. Ming-Lun Lee, Ching-Hua Chen and Jinn-Kong Sheu*,”Al_0.3Ga_0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask”, Physica E: Low-dimensional Systems and Nanostructures, 124, 114367(2020/07) 28/69, PHYSICS, CONDENSED MATTER; IF:3.382

170. Huang-Kai Wang, Sakthivel Kogularasu, Po-Hsun Liao, Yu-Tsun Yao, Ming-Lun Lee, Jinn-Kong Sheu*, “NiO_x Nanoparticles as Active Water Splitting Catalysts for the Improved Photostability of a n-GaN Photoanode”, Solar Energy Materials and Solar Cells, Vol.216, 110723( 2020/10) https://doi.org/10.1016/j.solmat.2020.110723 22/154, PHYSICS, APPLIED; IF:6.984

171. Jin-Wei Shi, Zuhaib Khan, Ray-Hua Horng, Hsiao-Yun Yeh, Chun-Kai Huang, Cheng-Yi Liu, Jie-Chen Shih, Yung-Hao Chang, Jia-Liang Yen, Jinn-Kong Sheu” High-power and single-mode VCSEL arrays with single-polarized outputs by using package-induced tensile strain” Optics Lett., Vol.45, no. 17, 4839-4842(2020/09)

172. Peng-Jui Wang, Chih-Chiang Shen, Kuan-Yu Chou, Mu-Han Ho, Jinn-Kong Sheu, and Chi-Kuang Sun,” Studying time-dependent contribution of hot-electron versus latticeinduced thermal-expansion response in ultra-thin Au-nanofilms” Appl. Phys. Lett.,Vol.117, Issue 15, 154101 (2020/10)

173. Chia-Che Liao, Yu-Tsun Yao, Sakthivel Kogularasu, Po-Hsun Liao, Ming-Lun Lee*, and Jinn-Kong Sheu*,” Cobalt Oxide Nanofilms on n-GaN Working Electrodes for Photoelectrochemical Water Splitting”, .J. Phys. Chem. C , 124, 46, 25196–25201(2020/11) IF:4.126(124/335, Materials science, Multidisciplinary)

174. Tien-Yu Wang, Wei-Chih Lai, Syuan-Yu Sie, Sheng-Po Chang, Yuh-Renn Wu, Yu-Zung Chiou, Cheng-Huang Kuo, Jinn-Kong Sheu,” AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier”, Appl. Phys. Lett. 117, 251101 (2020/12)

175. Chen-Ling Wu, Vitalyi Gusev, Lung-Han Peng, Jinn-Kong Sheu, Chi-Kuang Sun,” Ultra-short photoacoustic pulse generation through hot electron pressure in two-dimensional electron gas”, Optics Express, Vol. 28, No. 23 , 34045(2020/10 ) IF:3.894

2021

176. Kuan-Yu Chou, Chen-Ling Wu, Chih-Chiang Shen, Jinn-Kong Sheu, Chi-Kuang Sun,” Terahertz Photoacoustic Generation Using Ultrathin Nickel Nanofilms” J. Phys. Chem. C , 125, 5, 3134–3142(2021/01) IF:4.126

177. Wen-Yen Lin, Feng-Tsun Chien, Hsien-Chin Chiu, Jinn-Kong Sheu, Kuang-Po Hsueh,” Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1− XO Films Obtained through Radio-Frequency Magnetron Sputtering” Membranes, Vol.11,No.5, 373(2021/05) IF:4.106 (21/88, Polymer Science)

178.  

179. Man-Fang Huang, Ya-Hsuan Shih, Jih-Yuan Chang, Yen-Lung Huang, Jinn-Kong Sheu, Yen-Kuang Kuo,” Achievement of 110-nm-Wide Spectral Width in Monolithic Tunnel-Junction Light-Emitting Diode” IEEE Journal of Quantum Electronics, Vol.57. No.4, 1-6(2021/08) IF:2.318(89/160 Physics, Applied)

180. Kogularasu Sakthivel, Akilarasan Muthumariappan, Shen-Ming Chen*, Jinn-Kong Sheu*,” Scalable and Sustainable Synthetic Assessment between Solid-State Metathesis and Sonochemically derived Electrocatalysts (Strontium Molybdate) for the precise Anti-androgen Bicalutamide (CasodexTM) detection”, Microchemical Journal, 106465 (2021/05) IF:4.821 (16/83 Chemistry, Analytical)

181. Chi Wing Lee, Feng-Wu Lin, Po-Hsun Liao, Ming-Lun Lee* and Jinn-Kong Sheu*” Stable Photoelectrochemical Water Splitting using p-n GaN Junction Decorated with Nickel Oxides as Photoanodes” J. Phys. Chem. C 125, 30, 16776–16783 (2021/07) IF:4.126

182. Chun-Lin Su, Kogularasu Sakthivel , Yu-Tsun Yao , Po-Hsun Liao, Ming-Lun Lee*, and Jinn-Kong Sheu*,” Effect of KOH-Treatment at Sol-gel Derived NiOx Film on GaN Photoanodes in Hydrogen Generation”, ACS Applied Energy Materials,  Vol.4, No.8, 8030–8035 (2021 Aug.) IF:6.959, (86/345, Materials Science, Multidisciplinary)

183. X.B. Joseph, S. Kogularasu, S.F. Wang, J.K. Sheu*, “Hydrothermal-Dependent Synthesis of Exfoliated Nickel Cobaltite Layers for Simultaneous Determination of IARC Group 2B, 3B Carcinogens”, ACS Applied Nano Materials, Vol.4, No.11, 12788–12797 (2021, Nov.) https://doi.org/10.1021/acsanm.1c03498 IF:6.14, (101/345, Materials Science, Multidisciplinary)

184. Tien-Yu Wang, Wei-Chih Lai, Syuan-Yu Sie, Sheng-Po Chang, Cheng-Huang Kuo, Jinn-Kong Sheu,” Deep Ultraviolet AlGaN-Based Light-Emitting Diodes with p-AlGaN/AlGaN Superlattice Hole Injection Structures”, Processes, 9, 1727(2021/09)

2022

185. Cheng-Yi Liu, Chun-Kai Huang, Yen-Yu Huang, Kun-Chieh Chang, Kun-Lin Yu, Chien-Hung Chiang, Chun-Guey Wu, Shih-Chang Lee, Wei-Yu Yen, Jinn-Kong Sheu, Jin-Wei Shi,”Flexible multijunction solar cells embedded inside smart dust modules for outdoor applications to Smart Grids”, Applied Energy 306, 117970(2022/01/15) IF:11.446, (9/143, Engineering, Chemical)

186. Y.T .Yao, W.H. Liu, S. Kogularasu, M.L. Lee, J.K. Sheu*, “Improved Performance of GaN Photoelectrodes from the Facile Fabrication of a Binder-Free Catalyst: Ni(OH)2 Nanosheets” ACS Applied Energy Materials 5 (3), 3471-3476(2022/02/18) IF:6.959, (86/345, Materials Science, Multidisciplinary)

187. P.F. Chi, F.W. Lin, M.L. Lee, J.K. Sheu*, “High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions”, ACS Photonics 9 (3), 1002-1007(2022/02/17) IF:7.077, (13/101, Optics)

188. Sakthivel Kogularasu, Balasubramanian Sriram, Sea-Fue Wang, J.K. Sheu*, “Sea-Urchin-Like Bi2S3 Microstructures Decorated with Graphitic Carbon Nitride Nanosheets for Use in Food Preservation”, ACS Appl. Nano Mater., 5( 2) 2375–2384(2022/01/25) IF:6.14, (101/345, Materials Science, Multidisciplinary)

189. Ming- Lun Lee, Shang-Ju Tu, and Jinn-Kong Sheu*, ”InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer” Physica E: Low-dimensional Systems and Nanostructures, 143, 15352(2022/09)

190. T.Y. Wang, W.C. Lai, S.Y. Sie, S.P. Chang, C.H. Kuo, J.K. Sheu, J.S. Bow, “AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized AlxGa2–xO3 Sidewalls”, ACS omega 7 (17), 15027-15036(2022/04) IF:4.132, (73/179, Chemistry, Multidisciplinary)

191. Y.T. Yao, S. Kogularasu, W.H. Sun, T.W. Huang, M.L. Lee*, J.K. Sheu*,” Effects of FeOOH Nanofilms on Photoelectrochemical Reaction Using Gallium Nitride as Photoelectrodes” ACS Applied Energy Materials, 12, 15673–15679 (2022/11) IF:6.959, (86/345, Materials Science, Multidisciplinary)

192. Sakthivel Kogularasu, Balasubramanian Sriram, Sea-Fue Wang, Jinn-Kong Sheu*, “Superlattice Stacking by Confinement of the Layered Double Hydroxide/Vanadium Carbide Hybrid Composite. The Effect on Interlayer Anions (SO42–and CO32–) for Comparing the Electrochemical Sensing of a Food Adulterant” ACS Sustainable Chemistry & Engineering, 10, 46, 15115–15123 (2022/11/09) IF:8.4, (13/143, Engineering, Chemical)

193. B Sriram, S Kogularasu, YF Hsu, SF Wang, J.K. Sheu,” Fabrication of Praseodymium Vanadate Nanoparticles on Disposable Strip for Rapid and Real-Time Amperometric Sensing of Arsenic Drug Roxarsone” Inorganic Chemistry 61 (41), 16370-16379, (2022/10). IF:7,( 5/46, Chemistry, Inorganic & Nuclear)

2023

194. Ping-Feng Chi, Wei-Che Chang,  Ming-Lun Lee*,  Jinn-Kong Sheua*, Solar-blind UV Schottky barrier Photodetectors formed by Au/Ni on β-(Al_xGa_1-x)₂O₃/AlGaN heterostructures, Journal of Materials Chemistry C , 11(13), 4384-4392(2023/02) IF:6.4(24/161 Physics, Applied)

195. P.F. Chi, F.W. Lin, M.L. Lee*, J.K. Sheu*, “Ga2O3/GaN-based solar-blind phototransistors fabricated using a thermal oxidation process performed on the GaN pn junction layers” Journal of Alloys and Compounds, 935, 168057(2023/02) IF:6.2, (5/79, Metallurgy & Metallurgical Engineering)

196. P. J. Wang, C.J. Chang, S.Y. Lin, J.K. Sheu, C.K. Sun, “Temporally probing the thermal phonon and charge transfer induced out-of-plane acoustical displacement of monolayer and bi-layer MoS2/GaN heterojunction” Photoacoustics 30, 100477(2023/04)

197. Tien-Yu Wang, Wei-Chih Lai, Qiao-Ju Xie, Shun-Hao Yang, Sheng-Po Chang, Cheng-Huang Kuo, Jinn-Kong Sheu,” The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes”, RSC advances 13 (8), 5437-5443(2023/02)

198. Balasubramanian Sriram, Sakthivel Kogularasu, Sea-Fue Wang, Jinn-Kong Sheu, “Deep Eutectic Solvent-Mediated Synthesis of Spinel Zinc Chromite Nanoparticles: A Simple Label-Free Electrochemical Sensor for Dopamine and Ascorbic Acid”, ACS Applied Nano Materials, 6, No.19, 17593-17602(2023)

199. S. Kogularasu*, Y.Y. Lee, G.P. Chang-Chien*, M. Govindasamy*, J.K. Sheu*, “Nanofibers: Empowering Electrochemical Sensors for Reliable Detection of Food and Environmental Toxins”, Journal of The Electrochemical Society, 170,No.7, 077514 (2023/07)

200. YT Yao, TW Huang, YL Chuang, ML Lee*, JK Sheu*, “Seed-Assisted Synthesis of Ni(OH)2 Nanosheets on InGaN Films as Photoelectrodes toward Solar-Driven Water Splitting”, ACS Applied Energy Materials 6 (18), 9516-9522(2023/09)

2024

201. B. Li, C. Mi, J.H. Kang, H. Li, RT Elafandy, W.C. Lai, J.K. Sheu, J. Han,” Photonic engineering of InP towards homoepitaxial short-wavelength infrared VCSELs” Optica 11 (1), 113-119(2024)

202. Kogularasu Sakthivel*, Yen-Yi Lee, Balasubramanian Sriram*, Sea-Fue Wang, Mary George*, Guo-Ping Chang-Chien*, Jinn-Kong Sheu*” Unlocking Catalytic Potential: Exploring the Impact of Thermal Treatment on Enhanced Electrocatalysis of Nanomaterials”, Angew. Chem., 136, e202311806(2023)